About: Pure and intentionally doped indium phosphide wafers treated by long time annealing at high temperatures.

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About: Pure and intentionally doped indium phosphide wafers treated by long time annealing at high temperatures. Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	InP crystals were grown by Czochralski method from undoped InP melt or doped with Ca, Zn, Fe or Mn or co-doped with Ti and Zn. Crystals were annealed in phosphorus ambient for 95 h at 950 o C and cooled slowly. Conversion to the semi-insulating state was studies by Hall measurements and low temperature optical absorption spectroscopy. The undoped samples with electron concentration below 1 x 10 16 cm -3 became semiinsulating due to decreasing content of shallow donors and increasing content of the active Fe. InP crystals were grown by Czochralski method from undoped InP melt or doped with Ca, Zn, Fe or Mn or co-doped with Ti and Zn. Crystals were annealed in phosphorus ambient for 95 h at 950 o C and cooled slowly. Conversion to the semi-insulating state was studies by Hall measurements and low temperature optical absorption spectroscopy. The undoped samples with electron concentration below 1 x 10 16 cm -3 became semiinsulating due to decreasing content of shallow donors and increasing content of the active Fe. (en)
Title	Pure and intentionally doped indium phosphide wafers treated by long time annealing at high temperatures. Pure and intentionally doped indium phosphide wafers treated by long time annealing at high temperatures. (en)
skos:prefLabel	Pure and intentionally doped indium phosphide wafers treated by long time annealing at high temperatures. Pure and intentionally doped indium phosphide wafers treated by long time annealing at high temperatures. (en)
skos:notation	RIV/67985882:_____/03:13030025!RIV/2004/AV0/A13004/N
http://linked.open.../vavai/riv/strany	938;944
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(IBS2067354), P(KSK1010104), Z(AV0Z1010914), Z(AV0Z2067918)
http://linked.open...iv/cisloPeriodika	11
http://linked.open...vai/riv/dodaniDat	2004
http://linked.open...aciTvurceVysledku	Žďánský, Karel
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav fotoniky a elektroniky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	624281
http://linked.open...ai/riv/idVysledku	RIV/67985882:_____/03:13030025
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	deep levels; light absorption; Hall effect (en)
http://linked.open.../riv/klicoveSlovo	Hall effect deep levels light absorption
http://linked.open...odStatuVydavatele	GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV	[6A923A128FD9]
http://linked.open...i/riv/nazevZdroje	Semiconductor Science and Technology
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...ocetUcastnikuAkce	0 (xsd:int)
http://linked.open...nichUcastnikuAkce	0 (xsd:int)
http://linked.open...vavai/riv/projekt	Condensed matter physics and materials science X-ray detectors based on InP
http://linked.open...UplatneniVysledku	2003
http://linked.open...v/svazekPeriodika	18
http://linked.open...iv/tvurceVysledku	Žďánský, Karel Pekárek, Ladislav Hlídek, P.
http://linked.open...n/vavai/riv/zamer	Experimentální a teoretický výzkum kondenzovaných systémů s význačnými fyzikálními vlastnostmi Výzkum generování, přenosu a zpracování širokopásmových, etalonových a řečových signálů s využitím příslušných polovodičových a optických struktur
issn	0268-1242
number of pages	7 (xsd:int)

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