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Description
  • Several groups of photoresistors based on thin film of evaporated CdS were prepared. Groups were distinguished in concentrations of acceptors (Cu) and donors (Cl) which were used in activation of layers. Each group was characterised by means of slope in visible range and by relative sensitivity in UVA region. Relative sensitivity in UVA region decreases when concentrations of activators increasee.
  • Several groups of photoresistors based on thin film of evaporated CdS were prepared. Groups were distinguished in concentrations of acceptors (Cu) and donors (Cl) which were used in activation of layers. Each group was characterised by means of slope in visible range and by relative sensitivity in UVA region. Relative sensitivity in UVA region decreases when concentrations of activators increasee. (en)
Title
  • Sensitivity of CdS photoresistors in ultraviolet spectrum and technology.
  • Sensitivity of CdS photoresistors in ultraviolet spectrum and technology. (en)
skos:prefLabel
  • Sensitivity of CdS photoresistors in ultraviolet spectrum and technology.
  • Sensitivity of CdS photoresistors in ultraviolet spectrum and technology. (en)
skos:notation
  • RIV/67985882:_____/01:13010048!RIV/2003/AV0/A13003/N
http://linked.open.../vavai/riv/strany
  • 70;73
http://linked.open...avai/riv/aktivita
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  • P(GA102/00/0939), P(KSK1010104), P(OC P3.160), Z(AV0Z2067918), Z(MSM 210000012)
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  • 695510
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  • RIV/67985882:_____/01:13010048
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  • photoresistors; - ultraviolet detectors; - instrumentation (en)
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  • [56717DD47648]
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  • Pilsen [CZ]
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  • Plzeň
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  • International Conference Applied Electronics 2001.
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  • Novotný, Jan
  • Franc, J.
  • Jirásek, L.
  • Kliment, P.
  • Petráň, S.
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number of pages
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  • Západočeská univerzita v Plzni
https://schema.org/isbn
  • 80-7082-758-0
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