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Description
| - Self assembled InAs quantum dots in GaAs/GaAlAs structures were examined by ballistic electron emission microscopy/spectroscopy. The studied structures were grown by metal-organic chemical vapor deposition. Quantum dots with an image of elliptical shape were studied. Ballistic current-voltage characteristics through the quantum dot and outside the quantum dot are compared in the voltage range of 0,55 V to 2 V. In the voltage range from 0.55 V to 0.8 V examples of ballistic characteristics and their derivatives are given.
- Self assembled InAs quantum dots in GaAs/GaAlAs structures were examined by ballistic electron emission microscopy/spectroscopy. The studied structures were grown by metal-organic chemical vapor deposition. Quantum dots with an image of elliptical shape were studied. Ballistic current-voltage characteristics through the quantum dot and outside the quantum dot are compared in the voltage range of 0,55 V to 2 V. In the voltage range from 0.55 V to 0.8 V examples of ballistic characteristics and their derivatives are given. (en)
- Pomocí balistické elektronové emisní mikroskopie/spektroskopie byly studovány samouspořádané InAs kvantové tečky v GaAs/GaAlAs heterostruktuře. Měřené struktury byly narosteny metalorganickou epitaxií. Byly studovány tečky s eliptickým obrazem. Jsou uvedeny příklady spektroskopických chrakteristik na a mimo kvantovou tečku v napěťovém rozsahu 0,55V až 2V. Dále jsou uvedeny příklady spektroskopických charakteristik s jejich derivacemi v napěťovém rozsahu 0,55V až 0,8V. (cs)
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Title
| - Study of InAs quantum dots in AlGaAs/GaAs heterostructure by ballistic electron emission microscopy/spectroscopy
- Studium InAs kvantových teček v AlGaAs/GaAs heterostruktuře pomocí balistické elektronové emisní mikroskopie (cs)
- Study of InAs quantum dots in AlGaAs/GaAs heterostructure by ballistic electron emission microscopy/spectroscopy (en)
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skos:prefLabel
| - Study of InAs quantum dots in AlGaAs/GaAs heterostructure by ballistic electron emission microscopy/spectroscopy
- Studium InAs kvantových teček v AlGaAs/GaAs heterostruktuře pomocí balistické elektronové emisní mikroskopie (cs)
- Study of InAs quantum dots in AlGaAs/GaAs heterostructure by ballistic electron emission microscopy/spectroscopy (en)
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skos:notation
| - RIV/67985556:_____/07:00084538!RIV08-AV0-67985556
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(GA202/05/0242), Z(AV0Z10100521), Z(AV0Z10750506), Z(AV0Z20670512)
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/67985556:_____/07:00084538
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - quantum dots; ballistic transport; semiconductor heterojunctions (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - US - Spojené státy americké
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Hulicius, Eduard
- Pangrác, Jiří
- Šroubek, Filip
- Zelinka, Jiří
- Vaniš, Jan
- Walachová, Jarmila
- Malina, Václav
- Melichar, Karel
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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is http://linked.open...avai/riv/vysledek
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