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Description
  • Self assembled InAs quantum dots in GaAs/GaAlAs structures were examined by ballistic electron emission microscopy/spectroscopy. The studied structures were grown by metal-organic chemical vapor deposition. Quantum dots with an image of elliptical shape were studied. Ballistic current-voltage characteristics through the quantum dot and outside the quantum dot are compared in the voltage range of 0,55 V to 2 V. In the voltage range from 0.55 V to 0.8 V examples of ballistic characteristics and their derivatives are given.
  • Self assembled InAs quantum dots in GaAs/GaAlAs structures were examined by ballistic electron emission microscopy/spectroscopy. The studied structures were grown by metal-organic chemical vapor deposition. Quantum dots with an image of elliptical shape were studied. Ballistic current-voltage characteristics through the quantum dot and outside the quantum dot are compared in the voltage range of 0,55 V to 2 V. In the voltage range from 0.55 V to 0.8 V examples of ballistic characteristics and their derivatives are given. (en)
  • Pomocí balistické elektronové emisní mikroskopie/spektroskopie byly studovány samouspořádané InAs kvantové tečky v GaAs/GaAlAs heterostruktuře. Měřené struktury byly narosteny metalorganickou epitaxií. Byly studovány tečky s eliptickým obrazem. Jsou uvedeny příklady spektroskopických chrakteristik na a mimo kvantovou tečku v napěťovém rozsahu 0,55V až 2V. Dále jsou uvedeny příklady spektroskopických charakteristik s jejich derivacemi v napěťovém rozsahu 0,55V až 0,8V. (cs)
Title
  • Study of InAs quantum dots in AlGaAs/GaAs heterostructure by ballistic electron emission microscopy/spectroscopy
  • Studium InAs kvantových teček v AlGaAs/GaAs heterostruktuře pomocí balistické elektronové emisní mikroskopie (cs)
  • Study of InAs quantum dots in AlGaAs/GaAs heterostructure by ballistic electron emission microscopy/spectroscopy (en)
skos:prefLabel
  • Study of InAs quantum dots in AlGaAs/GaAs heterostructure by ballistic electron emission microscopy/spectroscopy
  • Studium InAs kvantových teček v AlGaAs/GaAs heterostruktuře pomocí balistické elektronové emisní mikroskopie (cs)
  • Study of InAs quantum dots in AlGaAs/GaAs heterostructure by ballistic electron emission microscopy/spectroscopy (en)
skos:notation
  • RIV/67985556:_____/07:00084538!RIV08-AV0-67985556
http://linked.open.../vavai/riv/strany
  • 042110.1;042110.3
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA202/05/0242), Z(AV0Z10100521), Z(AV0Z10750506), Z(AV0Z20670512)
http://linked.open...iv/cisloPeriodika
  • 4
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 453262
http://linked.open...ai/riv/idVysledku
  • RIV/67985556:_____/07:00084538
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • quantum dots; ballistic transport; semiconductor heterojunctions (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [C59C93D83E4F]
http://linked.open...i/riv/nazevZdroje
  • Applied Physics Letters
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 91
http://linked.open...iv/tvurceVysledku
  • Hulicius, Eduard
  • Pangrác, Jiří
  • Šroubek, Filip
  • Zelinka, Jiří
  • Vaniš, Jan
  • Walachová, Jarmila
  • Malina, Václav
  • Melichar, Karel
http://linked.open...n/vavai/riv/zamer
issn
  • 0003-6951
number of pages
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