About: Elastic, electronic and optical properties of SiGe2N4 under pressure: An ab initio study     Goto   Sponge   NotDistinct   Permalink

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  • SiGe2N4 were studied by means of the full-relativistic version of the full-potential augmented plane wave plus local orbitals. We employed both the generalized-gradient approximation (GGA), which is based on exchange-correlation energy optimization to calculate the total energy, and the Engel-Vosko formalism, which optimizes the corresponding potential for band structure calculations. The calculated bulk properties, including lattice parameters, bulk modulus and their pressure derivatives, are in reasonable agreement with the available data. We have determined the full set of first-order elastic constants and their pressure dependence, which have not been calculated and measured yet. Band structure, density of states and pressure coefficients of energy band gaps are given. The obtained results for band structure using EV-GGA are larger than that of GGA.
  • SiGe2N4 were studied by means of the full-relativistic version of the full-potential augmented plane wave plus local orbitals. We employed both the generalized-gradient approximation (GGA), which is based on exchange-correlation energy optimization to calculate the total energy, and the Engel-Vosko formalism, which optimizes the corresponding potential for band structure calculations. The calculated bulk properties, including lattice parameters, bulk modulus and their pressure derivatives, are in reasonable agreement with the available data. We have determined the full set of first-order elastic constants and their pressure dependence, which have not been calculated and measured yet. Band structure, density of states and pressure coefficients of energy band gaps are given. The obtained results for band structure using EV-GGA are larger than that of GGA. (en)
Title
  • Elastic, electronic and optical properties of SiGe2N4 under pressure: An ab initio study
  • Elastic, electronic and optical properties of SiGe2N4 under pressure: An ab initio study (en)
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  • Elastic, electronic and optical properties of SiGe2N4 under pressure: An ab initio study
  • Elastic, electronic and optical properties of SiGe2N4 under pressure: An ab initio study (en)
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  • RIV/67179843:_____/09:00342932!RIV11-AV0-67179843
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(AV0Z60870520)
http://linked.open...iv/cisloPeriodika
  • 373
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
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  • 312724
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  • RIV/67179843:_____/09:00342932
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  • elastic constants; electronic properties; optical constants; pressure effects (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • NL - Nizozemsko
http://linked.open...ontrolniKodProRIV
  • [F62EA4FEAED1]
http://linked.open...i/riv/nazevZdroje
  • Physics Letters. A
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 27-28
http://linked.open...iv/tvurceVysledku
  • Khenata, R.
  • Bouhemadou, A.
  • Rached, D.
  • Benkhettou, N.
  • Reshak, Ali H
  • Moakafi, M.
http://linked.open...ain/vavai/riv/wos
  • 000267348900017
http://linked.open...n/vavai/riv/zamer
issn
  • 0375-9601
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