About: Nonlinear optical study of amorphous SiN : H films on the Si(111) substrate

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About: Nonlinear optical study of amorphous SiN : H films on the Si(111) substrate Goto Sponge NotDistinct Permalink

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Description	A correlation between the resistivity-voltage dependences of the hydrogenated SiN/Si(111) films and the photo-induced third-harmonic generation (PITHG) at lambda = 1064 nm in the reflected light regime was found. The contribution to the PITHG is both due to linear photo-induced surface changes as well as due to the hydrogen dopants. When the fundamental power density increases to higher than 1.2 GW/cm(2), there occurs a drastic decrease of the PITHG. Maximal PITHG changes are observed at a pump-probe delay time about 18 ps and the value of the PITHG slightly increases with the enhanced applied dc-electric field during illumination by a third-harmonic laser beam as a photo-inducing one. The deviation from the tripled frequency wavelength to higher wavelengths substantially suppresses the output PITHG signal. The crucial role of the interface trapping levels and silicon-hydrogen charge transfer is shown. A correlation between the resistivity-voltage dependences of the hydrogenated SiN/Si(111) films and the photo-induced third-harmonic generation (PITHG) at lambda = 1064 nm in the reflected light regime was found. The contribution to the PITHG is both due to linear photo-induced surface changes as well as due to the hydrogen dopants. When the fundamental power density increases to higher than 1.2 GW/cm(2), there occurs a drastic decrease of the PITHG. Maximal PITHG changes are observed at a pump-probe delay time about 18 ps and the value of the PITHG slightly increases with the enhanced applied dc-electric field during illumination by a third-harmonic laser beam as a photo-inducing one. The deviation from the tripled frequency wavelength to higher wavelengths substantially suppresses the output PITHG signal. The crucial role of the interface trapping levels and silicon-hydrogen charge transfer is shown. (en)
Title	Nonlinear optical study of amorphous SiN : H films on the Si(111) substrate Nonlinear optical study of amorphous SiN : H films on the Si(111) substrate (en)
skos:prefLabel	Nonlinear optical study of amorphous SiN : H films on the Si(111) substrate Nonlinear optical study of amorphous SiN : H films on the Si(111) substrate (en)
skos:notation	RIV/67179843:_____/08:00343301!RIV11-AV0-67179843
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(AV0Z60870520), Z(MSM6007665808)
http://linked.open...iv/cisloPeriodika	8
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	AL- JAARY, Ali Reshak
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Centrum výzkumu globální změny AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	382893
http://linked.open...ai/riv/idVysledku	RIV/67179843:_____/08:00343301
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	2nd-harmonic; generation; thin-films (en)
http://linked.open.../riv/klicoveSlovo	thin-films generation 2nd-harmonic
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[E8C3A72354E8]
http://linked.open...i/riv/nazevZdroje	Laser Physics
http://linked.open...in/vavai/riv/obor	BO
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...UplatneniVysledku	2008
http://linked.open...v/svazekPeriodika	18
http://linked.open...iv/tvurceVysledku	Mandracci, P. Reshak, Ali H Claudet, B. Michalska-Malecka, K. Plucinsky, K.
http://linked.open...ain/vavai/riv/wos	000258408000016
http://linked.open...n/vavai/riv/zamer	Spatial and functional dynamics of biological, ecological and socio-economic systems interacting with global climatic change Fyzikální biologie -nové přístupy v biologickém výzkumu
issn	1054-660X
number of pages	3 (xsd:int)
is http://linked.open...avai/riv/vysledek of	Nonlinear optical study of amorphous SiN : H films on the Si(111) substrate Nonlinear optical study of amorphous SiN : H films on the Si(111) substrate Nonlinear optical study of amorphous SiN : H films on the Si(111) substrate

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