About: Spectroscopic ellipsometry of anodized layer on single crystal InAsSb layer grown by melt epitaxy

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About: Spectroscopic ellipsometry of anodized layer on single crystal InAsSb layer grown by melt epitaxy Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Anodized layers on InAsSb, InSb, and InAs surfaces are characterized using phase modulation spectroscopic ellipsometry in a wide spectral range from 0.6 to 6.5 eV. Single crystal InAs0.04Sb0.94 layer was grown using melt-epitaxy (ME). Optical properties of anodized layer prepared on InAsSb single crystal are compared with those on pure single crystals of InAs and InSb. Ellipsometric spectra of were fitted to the Tauc-Lorentz model describing the anodizing layer optical functions. Clear tendency of ultraviolet shift of the band gap energy with decreasing antimony content is observed. Anodized layers on InAsSb, InSb, and InAs surfaces are characterized using phase modulation spectroscopic ellipsometry in a wide spectral range from 0.6 to 6.5 eV. Single crystal InAs0.04Sb0.94 layer was grown using melt-epitaxy (ME). Optical properties of anodized layer prepared on InAsSb single crystal are compared with those on pure single crystals of InAs and InSb. Ellipsometric spectra of were fitted to the Tauc-Lorentz model describing the anodizing layer optical functions. Clear tendency of ultraviolet shift of the band gap energy with decreasing antimony content is observed. (en) Spektroskopická elipsometrie anodizační vrstvy na vrstvě monokrystalu InAsSb připravené epitaxí z taveniny (cs)
Title	Spectroscopic ellipsometry of anodized layer on single crystal InAsSb layer grown by melt epitaxy Spectroscopic ellipsometry of anodized layer on single crystal InAsSb layer grown by melt epitaxy (en) Spektroskopická elipsometrie anodizační vrstvy na vrstvě monokrystalu InAsSb připravené epitaxí z taveniny (cs)
skos:prefLabel	Spectroscopic ellipsometry of anodized layer on single crystal InAsSb layer grown by melt epitaxy Spectroscopic ellipsometry of anodized layer on single crystal InAsSb layer grown by melt epitaxy (en) Spektroskopická elipsometrie anodizační vrstvy na vrstvě monokrystalu InAsSb připravené epitaxí z taveniny (cs)
skos:notation	RIV/61989100:27350/08:00019796!RIV09-MSM-27350___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(KAN400100653), Z(MSM6198910016)
http://linked.open...iv/cisloPeriodika	5
http://linked.open...vai/riv/dodaniDat	2009
http://linked.open...aciTvurceVysledku	Postava, Kamil Pištora, Jaromír
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola báňská - Technická univerzita Ostrava / Hornicko-geologická fakulta
http://linked.open...dnocenehoVysledku	396463
http://linked.open...ai/riv/idVysledku	RIV/61989100:27350/08:00019796
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Spectroscopic ellipsometry; anodized layer; single crystal InAsSb; melt epitaxy (en)
http://linked.open.../riv/klicoveSlovo	Spectroscopic ellipsometry anodized layer melt epitaxy single crystal InAsSb
http://linked.open...odStatuVydavatele	DE - Spolková republika Německo
http://linked.open...ontrolniKodProRIV	[DBA705A1E13B]
http://linked.open...i/riv/nazevZdroje	physica status solidi (c) - current topics in solid state physics
http://linked.open...in/vavai/riv/obor	BH
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	7 (xsd:int)
http://linked.open...vavai/riv/projekt	Self-organized magnetic nanostructures
http://linked.open...UplatneniVysledku	2008
http://linked.open...v/svazekPeriodika	5
http://linked.open...iv/tvurceVysledku	Pištora, Jaromír Postava, Kamil Halagačka, L. Yamaguchi, T. Gao, Y. Z. Gong, X. Y. Nakaoka, A.
http://linked.open...n/vavai/riv/zamer	Syntéza, struktura a vlastnosti nanomateriálů založených na bázi interkalovaných fylosylikátů
issn	1610-1634
number of pages	4 (xsd:int)
http://localhost/t...ganizacniJednotka	27350
is http://linked.open...avai/riv/vysledek of	Spectroscopic ellipsometry of anodized layer on single crystal InAsSb layer grown by melt epitaxy Spectroscopic ellipsometry of anodized layer on single crystal InAsSb layer grown by melt epitaxy Spectroscopic ellipsometry of anodized layer on single crystal InAsSb layer grown by melt epitaxy Spectroscopic ellipsometry of anodized layer on single crystal InAsSb layer grown by melt epitaxy

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