About: Thickness of SiO2 thin film on silicon wafer measured by dispersive white-light spectral interferometry

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About: Thickness of SiO2 thin film on silicon wafer measured by dispersive white-light spectral interferometry Goto Sponge NotDistinct Permalink

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Description	Tloušťka tenké vrstvy SiO2 na křemíkovém waferu měřená disperzní interferometrií v bílem světle (cs) We present a white-light spectral interferometric technique for measuring the thickness of SiO2 thin film on a silicon wafer. The technique utilizes a slightly dispersive Michelson interferometer with a cube beam splitter and a fibre-optic spectrometer to record channelled spectra in two configurations. In the first, a standard configuration with two identical metallic mirrors, the recorded channelled spectrum is fitted to the theoretical one to determine the effective thickness of the beam splitter made of BK7 optical glass. In the second configuration one of the mirrors is replaced by SiO2 thin film on the silicon wafer and the recorded channelled spectrum is fitted to the theoretical one to determine the thin-film thickness. We consider multiple reflection within the thin-film structure, use the optical constants for all the materials involved in the set-up, and confirm very good agreement between theory and experiment. The technique is applied to four samples with various SiO2 film thicknesses. We present a white-light spectral interferometric technique for measuring the thickness of SiO2 thin film on a silicon wafer. The technique utilizes a slightly dispersive Michelson interferometer with a cube beam splitter and a fibre-optic spectrometer to record channelled spectra in two configurations. In the first, a standard configuration with two identical metallic mirrors, the recorded channelled spectrum is fitted to the theoretical one to determine the effective thickness of the beam splitter made of BK7 optical glass. In the second configuration one of the mirrors is replaced by SiO2 thin film on the silicon wafer and the recorded channelled spectrum is fitted to the theoretical one to determine the thin-film thickness. We consider multiple reflection within the thin-film structure, use the optical constants for all the materials involved in the set-up, and confirm very good agreement between theory and experiment. The technique is applied to four samples with various SiO2 film thicknesses. (en)
Title	Thickness of SiO2 thin film on silicon wafer measured by dispersive white-light spectral interferometry Thickness of SiO2 thin film on silicon wafer measured by dispersive white-light spectral interferometry (en) Tloušťka tenké vrstvy SiO2 na křemíkovém waferu měřená disperzní interferometrií v bílem světle (cs)
skos:prefLabel	Thickness of SiO2 thin film on silicon wafer measured by dispersive white-light spectral interferometry Thickness of SiO2 thin film on silicon wafer measured by dispersive white-light spectral interferometry (en) Tloušťka tenké vrstvy SiO2 na křemíkovém waferu měřená disperzní interferometrií v bílem světle (cs)
skos:notation	RIV/61989100:27350/06:00016807!RIV08-GA0-27350___
http://linked.open.../vavai/riv/strany	511-516
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA202/06/0531), Z(MSM6198910016)
http://linked.open...iv/cisloPeriodika	3
http://linked.open...vai/riv/dodaniDat	2008
http://linked.open...aciTvurceVysledku	Hlubina, Petr Ciprian, Dalibor Lesňák, Michal Luňáček, Jiří
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola báňská - Technická univerzita Ostrava / Hornicko-geologická fakulta
http://linked.open...dnocenehoVysledku	503818
http://linked.open...ai/riv/idVysledku	RIV/61989100:27350/06:00016807
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	FIBEROPTIC SPECTROMETER; WAVELENGTH DEPENDENCE; REFLECTION (en)
http://linked.open.../riv/klicoveSlovo	WAVELENGTH DEPENDENCE FIBEROPTIC SPECTROMETER REFLECTION
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[E71BCD1F43CE]
http://linked.open...i/riv/nazevZdroje	APPLIED PHYSICS B-LASERS AND OPTICS
http://linked.open...in/vavai/riv/obor	BH
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Reflection and waveguiding effects in magnetic nanostructures
http://linked.open...UplatneniVysledku	2006
http://linked.open...v/svazekPeriodika	84
http://linked.open...iv/tvurceVysledku	Ciprian, Dalibor Hlubina, Petr Luňáček, Jiří Lesňák, Michal
http://linked.open...n/vavai/riv/zamer	Syntéza, struktura a vlastnosti nanomateriálů založených na bázi interkalovaných fylosylikátů
issn	0946-2171
number of pages	6 (xsd:int)
http://localhost/t...ganizacniJednotka	27350
is http://linked.open...avai/riv/vysledek of	Thickness of SiO2 thin film on silicon wafer measured by dispersive white-light spectral interferometry Thickness of SiO2 thin film on silicon wafer measured by dispersive white-light spectral interferometry

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