About: Characterization of silicon oxide thin films deposited by plasma enhanced chemical vapour deposition from octamethylcyclotetrasiloxane/oxygen feeds.

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About: Characterization of silicon oxide thin films deposited by plasma enhanced chemical vapour deposition from octamethylcyclotetrasiloxane/oxygen feeds. Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Plasma enhanced chemical vapour deposition (PECVD) of thinoxide films was investigated, changing electrical potential conditions at the substrate electrode (dc, rf coupled orpositive biased). Rf discharge at the frequency of 13.56 MHz was generated in a planar reactor with two internal electrodes. Silicon substrates were placed on the powered electrode. The octamethylcyclotetrasiloxane (OMTS) was chosenas a source of O-Si-O groups in order to test new possibilities in the silicon oxide depositions. The reflectance inthe visible, the transmittance in the infrared region, X-ray photoelectron spectra (XPS) and Rutherford backscattering method (RBS) analyses were applied to describe the deposition rate, the optical properties, the composition and the structure of the deposited films. The comparison among these four methods concerning the film composition and structure is discussed. The pronounced changes in the deposition rate with rf power or dc bias typical of every electrical potential condition were o Plasma enhanced chemical vapour deposition (PECVD) of thinoxide films was investigated, changing electrical potential conditions at the substrate electrode (dc, rf coupled orpositive biased). Rf discharge at the frequency of 13.56 MHz was generated in a planar reactor with two internal electrodes. Silicon substrates were placed on the powered electrode. The octamethylcyclotetrasiloxane (OMTS) was chosenas a source of O-Si-O groups in order to test new possibilities in the silicon oxide depositions. The reflectance inthe visible, the transmittance in the infrared region, X-ray photoelectron spectra (XPS) and Rutherford backscattering method (RBS) analyses were applied to describe the deposition rate, the optical properties, the composition and the structure of the deposited films. The comparison among these four methods concerning the film composition and structure is discussed. The pronounced changes in the deposition rate with rf power or dc bias typical of every electrical potential condition were o (en)
Title	Characterization of silicon oxide thin films deposited by plasma enhanced chemical vapour deposition from octamethylcyclotetrasiloxane/oxygen feeds. Characterization of silicon oxide thin films deposited by plasma enhanced chemical vapour deposition from octamethylcyclotetrasiloxane/oxygen feeds. (en)
skos:prefLabel	Characterization of silicon oxide thin films deposited by plasma enhanced chemical vapour deposition from octamethylcyclotetrasiloxane/oxygen feeds. Characterization of silicon oxide thin films deposited by plasma enhanced chemical vapour deposition from octamethylcyclotetrasiloxane/oxygen feeds. (en)
skos:notation	RIV/61389005:_____/99:49000293!RIV/2003/AV0/A49003/N
http://linked.open.../vavai/riv/strany	49;59
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(AV0Z1048901)
http://linked.open...iv/cisloPeriodika	N/A
http://linked.open...vai/riv/dodaniDat	2003
http://linked.open...aciTvurceVysledku	Peřina, Vratislav
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav jaderné fyziky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	736683
http://linked.open...ai/riv/idVysledku	RIV/61389005:_____/99:49000293
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	N/A (en)
http://linked.open.../riv/klicoveSlovo	N/A
http://linked.open...odStatuVydavatele	GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV	[C03C42CCBAE0]
http://linked.open...i/riv/nazevZdroje	Thin Solid Films
http://linked.open...in/vavai/riv/obor	BG
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...ocetUcastnikuAkce	0 (xsd:int)
http://linked.open...nichUcastnikuAkce	0 (xsd:int)
http://linked.open...UplatneniVysledku	1999
http://linked.open...v/svazekPeriodika	338
http://linked.open...iv/tvurceVysledku	Peřina, Vratislav Zajíčková, L. Janča, J.
http://linked.open...n/vavai/riv/zamer	Theoretical and experimental investigation of atomic nuclei and exploitation of nuclear methods in interdisciplinary research
issn	0040-6090
number of pages	11 (xsd:int)

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