About: Role of reactive metals in Ge/Pd/GaAs contact structures

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	This article describes the behavior of the contact structures of the Ge/Pd type with addition of a very thin layer of a reactive metal (Ti, Ni, Cr) deposited on the surface of the GaAs plate prior to the metallization. The most suitable structure by the contact resistivity and thermal stability is Ge(40)/Pd(4)/Ti(0.5). This structure showed minimal contact resistivity 2.66 X 10(-6) Omegacm(2). During the reliability test carried out at 400 degreesC, the contact resistivity only doubled after 10 h. The RBS measurement results show little mixing between titanium and GaAs. Chromium and nickel reacted with GaAs substrate very strongly. As presumed, the deposited reactive metals reduce the natural oxides on the GaAs surface, the effect of titanium being the most significant This article describes the behavior of the contact structures of the Ge/Pd type with addition of a very thin layer of a reactive metal (Ti, Ni, Cr) deposited on the surface of the GaAs plate prior to the metallization. The most suitable structure by the contact resistivity and thermal stability is Ge(40)/Pd(4)/Ti(0.5). This structure showed minimal contact resistivity 2.66 X 10(-6) Omegacm(2). During the reliability test carried out at 400 degreesC, the contact resistivity only doubled after 10 h. The RBS measurement results show little mixing between titanium and GaAs. Chromium and nickel reacted with GaAs substrate very strongly. As presumed, the deposited reactive metals reduce the natural oxides on the GaAs surface, the effect of titanium being the most significant (en) Je popsáno chování kontaktních struktur typu Ge/Pd s přidanou velmi tenkou vrstvou reaktivního kovu (Ti,Ni,Cr) deponovaného na povrchu Ga As desky před metalizací. Nejvhodnější struktura z hlediska kontaktní rezistivity a tepelné stability je Ge(40)/Pd(4)/Ti(0.5) (cs)
Title	Úloha reaktivních kovů v Ge/Pd/GaAs kontaktních strukturách (cs) Role of reactive metals in Ge/Pd/GaAs contact structures Role of reactive metals in Ge/Pd/GaAs contact structures (en)
skos:prefLabel	Úloha reaktivních kovů v Ge/Pd/GaAs kontaktních strukturách (cs) Role of reactive metals in Ge/Pd/GaAs contact structures Role of reactive metals in Ge/Pd/GaAs contact structures (en)
skos:notation	RIV/61389005:_____/03:00101833!RIV/2005/AV0/A49005/N
http://linked.open.../vavai/riv/strany	335;343
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(KSK1010104), Z(AV0Z1048901)
http://linked.open...iv/cisloPeriodika	3
http://linked.open...vai/riv/dodaniDat	2005
http://linked.open...aciTvurceVysledku	Peřina, Vratislav
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav jaderné fyziky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	625914
http://linked.open...ai/riv/idVysledku	RIV/61389005:_____/03:00101833
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	gallium arsenide;ohmic contact;contact resistivity (en)
http://linked.open.../riv/klicoveSlovo	ohmic contact gallium arsenide contact resistivity
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[FCC8EFCF27C5]
http://linked.open...i/riv/nazevZdroje	Microelectronic Engineering
http://linked.open...in/vavai/riv/obor	BG
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	2 (xsd:int)
http://linked.open...vavai/riv/projekt	Condensed matter physics and materials science
http://linked.open...UplatneniVysledku	2003
http://linked.open...v/svazekPeriodika	65
http://linked.open...iv/tvurceVysledku	Peřina, Vratislav Macháč, P.
http://linked.open...n/vavai/riv/zamer	Theoretical and experimental investigation of atomic nuclei and exploitation of nuclear methods in interdisciplinary research
issn	0167-9317
number of pages	9 (xsd:int)

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