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Description
| - Silicon nanowires and nanoneedles show promise for many device applications in nanoelectronics and nanophotonics, but the remaining challenge is to grow them at low temperatures on low-cost materials. Here we present plasma-enhanced chemical vapor deposition of crystalline/amorphous Si nanoneedles on glass at temperatures as low as 250 °C. High resolution electron microscopy and micro-Raman spectroscopy have been used to study the crystal structure and the growth mechanism of individual Si nanoneedles. The H2 dilution of the SiH4 plasma working gas has caused the formation of extremely sharp nanoneedle tips that in some cases do not contain a catalytic particle at the end.
- Silicon nanowires and nanoneedles show promise for many device applications in nanoelectronics and nanophotonics, but the remaining challenge is to grow them at low temperatures on low-cost materials. Here we present plasma-enhanced chemical vapor deposition of crystalline/amorphous Si nanoneedles on glass at temperatures as low as 250 °C. High resolution electron microscopy and micro-Raman spectroscopy have been used to study the crystal structure and the growth mechanism of individual Si nanoneedles. The H2 dilution of the SiH4 plasma working gas has caused the formation of extremely sharp nanoneedle tips that in some cases do not contain a catalytic particle at the end. (en)
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Title
| - The structure and growth mechanism of Si nanoneedles prepared by plasma-enhanced chemical vapor deposition
- The structure and growth mechanism of Si nanoneedles prepared by plasma-enhanced chemical vapor deposition (en)
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skos:prefLabel
| - The structure and growth mechanism of Si nanoneedles prepared by plasma-enhanced chemical vapor deposition
- The structure and growth mechanism of Si nanoneedles prepared by plasma-enhanced chemical vapor deposition (en)
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skos:notation
| - RIV/61388980:_____/10:00352722!RIV11-MSM-61388980
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(KAN400100701), P(LC06040), P(LC510), Z(AV0Z10100521), Z(AV0Z40320502)
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/61388980:_____/10:00352722
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - nanoneedles; nanowires; silicon; plasma; chemical vapor deposition; crystal structure; growth; phonon; SEM; Raman (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - GB - Spojené království Velké Británie a Severního Irska
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Hruška, Karel
- Ledinský, Martin
- Fejfar, Antonín
- Stuchlík, Jiří
- Bakardjieva, Snejana
- Kočka, Jan
- Stuchlíková, The-Ha
- Červenka, Jiří
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http://linked.open...ain/vavai/riv/wos
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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is http://linked.open...avai/riv/vysledek
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