About: Deposition of Germanium Nanowires from Digermane Precursor: Influence of the Substrate Pretreatment

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Germanium Nanowires (GeNWs) were synthesized by Low Pressure Chemical Vapor Deposition (LPCVD) of hexamethyldigermane (GeMe3)2 at temperature of 490 {degree sign}C and pressure of 90-100 Pa. GeNWs of several nanometers in diameter and a few microns in length were deposited onto various substrates - stainless steel, Fe, Mo, Ta, W, Si, and SiO2. Influence of surface pretreatment of the substrates (roughening of surface or Ge sputtering) is discussed in respect to the previously published theory of GeNW growth through the intermetallic alloy mechanism. The results conclude that another mechanism should be taken into account - the non-catalyst mechanism. Ge seeds necessary for triggering GeNW growth are formed by aggregation of Ge atoms/atom clusters/fragments which are stuck onto the substrate surface at the beginning of the process. The non-catalyst growth of GeNW triggered by such mechanism can be applied in growing GeNWs on semiconductors and insulators. Germanium Nanowires (GeNWs) were synthesized by Low Pressure Chemical Vapor Deposition (LPCVD) of hexamethyldigermane (GeMe3)2 at temperature of 490 {degree sign}C and pressure of 90-100 Pa. GeNWs of several nanometers in diameter and a few microns in length were deposited onto various substrates - stainless steel, Fe, Mo, Ta, W, Si, and SiO2. Influence of surface pretreatment of the substrates (roughening of surface or Ge sputtering) is discussed in respect to the previously published theory of GeNW growth through the intermetallic alloy mechanism. The results conclude that another mechanism should be taken into account - the non-catalyst mechanism. Ge seeds necessary for triggering GeNW growth are formed by aggregation of Ge atoms/atom clusters/fragments which are stuck onto the substrate surface at the beginning of the process. The non-catalyst growth of GeNW triggered by such mechanism can be applied in growing GeNWs on semiconductors and insulators. (en)
Title	Deposition of Germanium Nanowires from Digermane Precursor: Influence of the Substrate Pretreatment Deposition of Germanium Nanowires from Digermane Precursor: Influence of the Substrate Pretreatment (en)
skos:prefLabel	Deposition of Germanium Nanowires from Digermane Precursor: Influence of the Substrate Pretreatment Deposition of Germanium Nanowires from Digermane Precursor: Influence of the Substrate Pretreatment (en)
skos:notation	RIV/61388980:_____/09:00330687!RIV10-AV0-61388980
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA203/09/1088), Z(AV0Z40320502), Z(AV0Z40720504)
http://linked.open...iv/cisloPeriodika	8
http://linked.open...vai/riv/dodaniDat	2010
http://linked.open...aciTvurceVysledku	Klementová, Mariana Šubrt, Jan
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav anorganické chemie AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	309499
http://linked.open...ai/riv/idVysledku	RIV/61388980:_____/09:00330687
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	microelectronic circuits; nanoscale technology (en)
http://linked.open.../riv/klicoveSlovo	microelectronic circuits nanoscale technology
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[4D1A99FDA706]
http://linked.open...i/riv/nazevZdroje	ECS Transactions
http://linked.open...in/vavai/riv/obor	CH
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Preparation of the nanostructured Si/Ge/C deposits
http://linked.open...UplatneniVysledku	2009
http://linked.open...v/svazekPeriodika	25
http://linked.open...iv/tvurceVysledku	Dřínek, Vladislav Fajgar, Radek Klementová, Mariana Šubrt, Jan
http://linked.open...n/vavai/riv/zamer	Design, syntéza a charakterizace klastrů, kompozitů, komplexů a dalších sloučenin na bázi anorganických látek; mechanismy a kinetika jejich interakcí Investigation of multiphase reacting systems for the design of processes important in synthesis and preparation of novel materials, in energy production and in environmental protection
issn	1938-5862
number of pages	8 (xsd:int)
is http://linked.open...avai/riv/vysledek of	Deposition of Germanium Nanowires from Digermane Precursor: Influence of the Substrate Pretreatment Deposition of Germanium Nanowires from Digermane Precursor: Influence of the Substrate Pretreatment Deposition of Germanium Nanowires from Digermane Precursor: Influence of the Substrate Pretreatment Deposition of Germanium Nanowires from Digermane Precursor: Influence of the Substrate Pretreatment

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