About: Growth of adlayers studied by fluorination of isotopically engineered graphene

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Chemical vapor deposition on copper is currently one of the most prospective preparation techniques of large area graphene films. There are still many undisclosed questions regarding the growth process and its conditions. The adlayer formation belongs to those, not only because of the need of uniform monolayers, but also due to the increasing demand for high-coverage bilayers. The combination of Raman spectroscopy, isotopic labeling and functionalization using fluorine can provide the necessary insight into the CVD growth process. The disorder degree caused by the fluorination is unambiguously distinguished by Raman mapping and evaluation of more than 1000 spectra for the individual layers, suggesting the shielding of the C-13 adlayer underneath the continuous C-12 top layer. Chemical vapor deposition on copper is currently one of the most prospective preparation techniques of large area graphene films. There are still many undisclosed questions regarding the growth process and its conditions. The adlayer formation belongs to those, not only because of the need of uniform monolayers, but also due to the increasing demand for high-coverage bilayers. The combination of Raman spectroscopy, isotopic labeling and functionalization using fluorine can provide the necessary insight into the CVD growth process. The disorder degree caused by the fluorination is unambiguously distinguished by Raman mapping and evaluation of more than 1000 spectra for the individual layers, suggesting the shielding of the C-13 adlayer underneath the continuous C-12 top layer. (en)
Title	Growth of adlayers studied by fluorination of isotopically engineered graphene Growth of adlayers studied by fluorination of isotopically engineered graphene (en)
skos:prefLabel	Growth of adlayers studied by fluorination of isotopically engineered graphene Growth of adlayers studied by fluorination of isotopically engineered graphene (en)
skos:notation	RIV/61388955:_____/14:00438494!RIV15-AV0-61388955
http://linked.open...avai/riv/aktivita	I P
http://linked.open...avai/riv/aktivity	I, P(LH13022)
http://linked.open...iv/cisloPeriodika	12
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Kalbáč, Martin Frank, Otakar Ek Weis, Johan da Costa, Sara
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav fyzikální chemie J. Heyrovského AV ČR, v.v.i.
http://linked.open...dnocenehoVysledku	18652
http://linked.open...ai/riv/idVysledku	RIV/61388955:_____/14:00438494
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	chemical vapor deposition; graphene; isotope labeling (en)
http://linked.open.../riv/klicoveSlovo	graphene isotope labeling chemical vapor deposition
http://linked.open...odStatuVydavatele	DE - Spolková republika Německo
http://linked.open...ontrolniKodProRIV	[02A490F10814]
http://linked.open...i/riv/nazevZdroje	Physica Status Solidi B-Basic Solid State Physics
http://linked.open...in/vavai/riv/obor	CF
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Isotopically labeled graphene layers
http://linked.open...UplatneniVysledku	2014
http://linked.open...v/svazekPeriodika	251
http://linked.open...iv/tvurceVysledku	Kalbáč, Martin Frank, Otakar Ek Weis, Johan da Costa, Sara
http://linked.open...ain/vavai/riv/wos	000345830900029
issn	0370-1972
number of pages	4 (xsd:int)
http://bibframe.org/vocab/doi	10.1002/pssb.201451169

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