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Description
| - Porous silicon is a very attractive material due to its intense visible photoluminescence at room temp. Its unique phys. and chem. properties are detd. by the porous structure where a nanosized silicon layer is formed during the electrochem. etching of cryst. silicon. So far, the high chem. reactivity of the porous silicon surface has prevented its extensive application in optoelectronics. Considerable effort was put into the development of suitable techniques of stabilization. However, high chem. reactivity and sorption capacity of porous silicon represent the principal advantage for the construction of sensitive sensors of chem. species. This article provides a brief overview of the ongoing activities in the development of porous-silicon-based chem. sensors at the Charles University and at the Institute of Chem. Technol. So far, the detection of chem. species is based on the measurement of the changes in photoluminescence intensity and photoluminescence decay time, other complementary electroc
- Porous silicon is a very attractive material due to its intense visible photoluminescence at room temp. Its unique phys. and chem. properties are detd. by the porous structure where a nanosized silicon layer is formed during the electrochem. etching of cryst. silicon. So far, the high chem. reactivity of the porous silicon surface has prevented its extensive application in optoelectronics. Considerable effort was put into the development of suitable techniques of stabilization. However, high chem. reactivity and sorption capacity of porous silicon represent the principal advantage for the construction of sensitive sensors of chem. species. This article provides a brief overview of the ongoing activities in the development of porous-silicon-based chem. sensors at the Charles University and at the Institute of Chem. Technol. So far, the detection of chem. species is based on the measurement of the changes in photoluminescence intensity and photoluminescence decay time, other complementary electroc (en)
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Title
| - Nanostructured porous silicon - optical properties, surface modification and sensor applications
- Nanostructured porous silicon - optical properties, surface modification and sensor applications (en)
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skos:prefLabel
| - Nanostructured porous silicon - optical properties, surface modification and sensor applications
- Nanostructured porous silicon - optical properties, surface modification and sensor applications (en)
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skos:notation
| - RIV/60461373:22340/05:00022517!RIV10-MSM-22340___
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(GA203/03/0900), S, Z(MSM0021620835)
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/60461373:22340/05:00022517
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - Photoluminiscence; silicon; sensor; nanolayer (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - CH - Švýcarská konfederace
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Král, Vladimír
- Nižňanský, D.
- Němec, I.
- Dian, J.
- Jindřich, J.
- Jelínek, I.
- Lorenc, M.
- Chvojka, T.
- Vrkoslav, V.
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http://linked.open...ain/vavai/riv/wos
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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http://localhost/t...ganizacniJednotka
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