About: Graphene preparation by annealing of Co/SiC structure

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://www.sciencedirect.com/science/article/pii/S0169433214020959
Description	This work is focused on graphene preparation using the segregation method with Co/SiC structure, the method being a viable low temperature synthesis approach. The graphene preparation was carried out with the cobalt layer of 300 nm thickness; the technological process is based on an optimization of parameters (temperature and duration) of annealing which is a crucial step of the synthesis. 850 C as an annealing temperature and 10 s as an annealing duration have been found to be the most optimal. The prepared graphene is close to the bi-layer graphene structure with its parameters. Structural parameters of the prepared graphene were determined from spectra obtained by Raman spectroscopy. This work is focused on graphene preparation using the segregation method with Co/SiC structure, the method being a viable low temperature synthesis approach. The graphene preparation was carried out with the cobalt layer of 300 nm thickness; the technological process is based on an optimization of parameters (temperature and duration) of annealing which is a crucial step of the synthesis. 850 C as an annealing temperature and 10 s as an annealing duration have been found to be the most optimal. The prepared graphene is close to the bi-layer graphene structure with its parameters. Structural parameters of the prepared graphene were determined from spectra obtained by Raman spectroscopy. (en)
Title	Graphene preparation by annealing of Co/SiC structure Graphene preparation by annealing of Co/SiC structure (en)
skos:prefLabel	Graphene preparation by annealing of Co/SiC structure Graphene preparation by annealing of Co/SiC structure (en)
skos:notation	RIV/60461373:22310/14:43897940!RIV15-GA0-22310___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(GAP108/11/0894)
http://linked.open...iv/cisloPeriodika	NOV 30 2014
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Macháč, Petr Cichoň, Stanislav Mišková, Linda
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola chemicko-technologická v Praze / Fakulta chemické technologie
http://linked.open...dnocenehoVysledku	18574
http://linked.open...ai/riv/idVysledku	RIV/60461373:22310/14:43897940
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Raman spectroscopy; XPS analysis; Cobalt; Silicon carbide; Graphene (en)
http://linked.open.../riv/klicoveSlovo	Silicon carbide Raman spectroscopy XPS analysis Cobalt Graphene
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[3F1FF9FF38A9]
http://linked.open...i/riv/nazevZdroje	Applied Surface Science
http://linked.open...in/vavai/riv/obor	JJ
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Growth and processing of graphene layers on silicon carbide
http://linked.open...UplatneniVysledku	2014
http://linked.open...v/svazekPeriodika	320
http://linked.open...iv/tvurceVysledku	Cichoň, Stanislav Macháč, Petr Mišková, Linda Vondráček, Martin
http://linked.open...ain/vavai/riv/wos	000345399900072
issn	0169-4332
number of pages	8 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.apsusc.2014.09.104
http://localhost/t...ganizacniJednotka	22310

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