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Description
| - Silicon carbide discovered more than 121 years ago has a wide usage in the mechanical engineering industry as well as in electrical engineering. It is an excellent abrasive medium as well as a construction material with high resistance to mechanical and chemical deterioration. Under standard condition, silicon carbide has no melting point (decomposes at 2700 °C - principle used for industrial production of silicon), thus the bulk form must be prepared in a composite form with a metallic, ceramic or polymer binder. This method is suitable for tailoring of mechanical properties; nevertheless, it does not produce SiC form applicable for laboratory purposes. Binder-free sintering of SiC is practically impossible, despite decreased chemical resistivity of the produced material. Pure SiC is insoluble in all acids except hydrofluoric acid. Reaction of SiC with HF is enabled only due to residual SiO2 created during the industrial production. However, SiO2 located between the planes of growth of SiC crystal allows sintering without additional binders. Raman spectroscopy proved presence of cristobalite on the grain boundaries of SiC produced by Spark Plasma Sintering (SPS) process at 1800, 1850 °C and pressure of 60 MPa. Properties, especially chemical stability, of samples produced using SPS from SiC Norton F 1200 and SiC SINTEX 1200 commercial powders were compared with ROCAR SiSiC and SSiC commercial products.
- Silicon carbide discovered more than 121 years ago has a wide usage in the mechanical engineering industry as well as in electrical engineering. It is an excellent abrasive medium as well as a construction material with high resistance to mechanical and chemical deterioration. Under standard condition, silicon carbide has no melting point (decomposes at 2700 °C - principle used for industrial production of silicon), thus the bulk form must be prepared in a composite form with a metallic, ceramic or polymer binder. This method is suitable for tailoring of mechanical properties; nevertheless, it does not produce SiC form applicable for laboratory purposes. Binder-free sintering of SiC is practically impossible, despite decreased chemical resistivity of the produced material. Pure SiC is insoluble in all acids except hydrofluoric acid. Reaction of SiC with HF is enabled only due to residual SiO2 created during the industrial production. However, SiO2 located between the planes of growth of SiC crystal allows sintering without additional binders. Raman spectroscopy proved presence of cristobalite on the grain boundaries of SiC produced by Spark Plasma Sintering (SPS) process at 1800, 1850 °C and pressure of 60 MPa. Properties, especially chemical stability, of samples produced using SPS from SiC Norton F 1200 and SiC SINTEX 1200 commercial powders were compared with ROCAR SiSiC and SSiC commercial products. (en)
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Title
| - Silicon carbide for chemical application prepared by SPS method
- Silicon carbide for chemical application prepared by SPS method (en)
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skos:prefLabel
| - Silicon carbide for chemical application prepared by SPS method
- Silicon carbide for chemical application prepared by SPS method (en)
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skos:notation
| - RIV/60461373:22310/14:43897809!RIV15-MSM-22310___
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/60461373:22310/14:43897809
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - impurities in silicon carbide; silicon carbide corrosion; spark plasma sintering; silicon carbide (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...ontrolniKodProRIV
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http://linked.open...v/mistoKonaniAkce
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http://linked.open...i/riv/mistoVydani
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http://linked.open...i/riv/nazevZdroje
| - 2nd International Conference on Chemical Technology - ICCT 2014
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...UplatneniVysledku
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http://linked.open...iv/tvurceVysledku
| - Brožek, Vlastimil
- Mušálek, Radek
- Vilémová, Monika
- Mastný, Libor
- Kubatík, Tomáš František
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http://linked.open...vavai/riv/typAkce
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http://linked.open.../riv/zahajeniAkce
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number of pages
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http://purl.org/ne...btex#hasPublisher
| - Česká společnost průmyslové chemie
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https://schema.org/isbn
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http://localhost/t...ganizacniJednotka
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