About: Ni, NiSi2 and Si secondary ohmic contacts on SIC with high thermal stability

Facets (new session)
Description
Metadata
Settings
- owl:sameAs
- Inference Rule:

About: Ni, NiSi2 and Si secondary ohmic contacts on SIC with high thermal stability Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	A method for formation of enhanced ohmic contacts on SiC for operation under adverse conditions has been studied. Ni, NiSi2 and Si ohmic contacts were prepared and tested at 300 degrees C on air for hundreds of hours. NiSi2 and Si have showed high thermal stability. Moreover, also the so called secondary contacts have showed good electrical and structural properties in the test. The secondary ohmic contacts have been formed from the original ohmic contacts after they were etched off and replaced. Secondary ohmic contacts originate in a certain surface modification of the SiC substrate created during high temperature annealing of the original contact. All applied contact materials enable formation of quality secondary contacts which is especially noteworthy at NiSi2 and Si. The results bring new SiC device design perspectives with the application of the secondary ohmic contacts. For example, the contact is designed so that the primary contact attains as good ohmic behavior as possible with the secondary contact providing further important contact properties as high corrosion resistance, wire-bonding simplicity etc. A method for formation of enhanced ohmic contacts on SiC for operation under adverse conditions has been studied. Ni, NiSi2 and Si ohmic contacts were prepared and tested at 300 degrees C on air for hundreds of hours. NiSi2 and Si have showed high thermal stability. Moreover, also the so called secondary contacts have showed good electrical and structural properties in the test. The secondary ohmic contacts have been formed from the original ohmic contacts after they were etched off and replaced. Secondary ohmic contacts originate in a certain surface modification of the SiC substrate created during high temperature annealing of the original contact. All applied contact materials enable formation of quality secondary contacts which is especially noteworthy at NiSi2 and Si. The results bring new SiC device design perspectives with the application of the secondary ohmic contacts. For example, the contact is designed so that the primary contact attains as good ohmic behavior as possible with the secondary contact providing further important contact properties as high corrosion resistance, wire-bonding simplicity etc. (en)
Title	Ni, NiSi2 and Si secondary ohmic contacts on SIC with high thermal stability Ni, NiSi2 and Si secondary ohmic contacts on SIC with high thermal stability (en)
skos:prefLabel	Ni, NiSi2 and Si secondary ohmic contacts on SIC with high thermal stability Ni, NiSi2 and Si secondary ohmic contacts on SIC with high thermal stability (en)
skos:notation	RIV/60461373:22310/13:43896497!RIV14-GA0-22310___
http://linked.open...avai/predkladatel	Fakulta chemické technologie
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(GAP108/11/0894)
http://linked.open...iv/cisloPeriodika	JANUARY 2013
http://linked.open...vai/riv/dodaniDat	2014
http://linked.open...aciTvurceVysledku	Vojtík, Jiří Macháč, Petr Cichoň, Stanislav
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola chemicko-technologická v Praze / Fakulta chemické technologie
http://linked.open...dnocenehoVysledku	91789
http://linked.open...ai/riv/idVysledku	RIV/60461373:22310/13:43896497
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	secondary; stability; contact; ohmic; silicon carbide (en)
http://linked.open.../riv/klicoveSlovo	ohmic silicon carbide stability contact secondary
http://linked.open...odStatuVydavatele	CH - Švýcarská konfederace
http://linked.open...ontrolniKodProRIV	[72871DDC5841]
http://linked.open...i/riv/nazevZdroje	Mater. Sci. Forum
http://linked.open...in/vavai/riv/obor	CA
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...vavai/riv/projekt	Growth and processing of graphene layers on silicon carbide
http://linked.open...UplatneniVysledku	2013
http://linked.open...v/svazekPeriodika	740-742
http://linked.open...iv/tvurceVysledku	Cichoň, Stanislav Macháč, Petr Vojtík, Jiří
http://linked.open...ain/vavai/riv/wos	000319785500189
issn	0255-5476
number of pages	4 (xsd:int)
http://bibframe.org/vocab/doi	10.4028/www.scientific.net/MSF.740-742.797
http://localhost/t...ganizacniJednotka	22310

Faceted Search & Find service v1.16.118 as of Jun 21 2024

Alternative Linked Data Documents: ODE Content Formats:

RDF

ODATA

Microdata

About

OpenLink Virtuoso version 07.20.3240 as of Jun 21 2024, on Linux (x86_64-pc-linux-gnu), Single-Server Edition (126 GB total memory, 47 GB memory in use)
Data on this page belongs to its respective rights holders.
Virtuoso Faceted Browser Copyright © 2009-2024 OpenLink Software