About: Hydrogen silsesquioxane as a gate dielectric layer for SiC graphene FET

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Graphene can be prepared by annealing of SiC wafer. That allows large scale patterning by standard UV photolithography. Unfortunately SiC substrate does not allow backgating in contrast to graphene on silicon substrate (with thin silicon dioxide layer). The major challenge is to find suitable dielectric layer that can be used for electrostatic gating without significant influence on carrier mobility or another properties of graphene. We examined electrical behavior of electron exposed hydrogen silsesquioxane (HSQ) layer used as dielectric layer of topgated SiC graphene. We prepared seven sets of capacitor structures for test of HSQ layer electrical properties. The capacitors have different dimensions (100x5 - 100x100 mým) and each set had different exposure energy (12 - 480mýC/cm2) and annealing process. Electrodes and contacts were prepared by evaporation of 3/30 nm thick Cr/Au layer. The influence of exposure energy to electrical properties of HSQ layer was observed. The dimension of capacitor structures had lower effect than exposure energy. The gated Hall-bar structure of SiC graphene will be prepared subsequently. Hall-bar will be defined by e-beam lithography, etched by oxygen plasma and contacted by evaporation. HSQ will be used as a gate dielectric. Graphene can be prepared by annealing of SiC wafer. That allows large scale patterning by standard UV photolithography. Unfortunately SiC substrate does not allow backgating in contrast to graphene on silicon substrate (with thin silicon dioxide layer). The major challenge is to find suitable dielectric layer that can be used for electrostatic gating without significant influence on carrier mobility or another properties of graphene. We examined electrical behavior of electron exposed hydrogen silsesquioxane (HSQ) layer used as dielectric layer of topgated SiC graphene. We prepared seven sets of capacitor structures for test of HSQ layer electrical properties. The capacitors have different dimensions (100x5 - 100x100 mým) and each set had different exposure energy (12 - 480mýC/cm2) and annealing process. Electrodes and contacts were prepared by evaporation of 3/30 nm thick Cr/Au layer. The influence of exposure energy to electrical properties of HSQ layer was observed. The dimension of capacitor structures had lower effect than exposure energy. The gated Hall-bar structure of SiC graphene will be prepared subsequently. Hall-bar will be defined by e-beam lithography, etched by oxygen plasma and contacted by evaporation. HSQ will be used as a gate dielectric. (en)
Title	Hydrogen silsesquioxane as a gate dielectric layer for SiC graphene FET Hydrogen silsesquioxane as a gate dielectric layer for SiC graphene FET (en)
skos:prefLabel	Hydrogen silsesquioxane as a gate dielectric layer for SiC graphene FET Hydrogen silsesquioxane as a gate dielectric layer for SiC graphene FET (en)
skos:notation	RIV/60461373:22310/12:43894452!RIV13-GA0-22310___
http://linked.open...avai/predkladatel	Fakulta chemické technologie
http://linked.open...avai/riv/aktivita	P S
http://linked.open...avai/riv/aktivity	P(GAP108/11/0894), S
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Macháč, Petr
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola chemicko-technologická v Praze / Fakulta chemické technologie
http://linked.open...dnocenehoVysledku	140035
http://linked.open...ai/riv/idVysledku	RIV/60461373:22310/12:43894452
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	FET; Gate dielectric; Hydrogen silsesquioxane; Graphene (en)
http://linked.open.../riv/klicoveSlovo	FET Gate dielectric Hydrogen silsesquioxane Graphene
http://linked.open...ontrolniKodProRIV	[3B4702868B7F]
http://linked.open...v/mistoKonaniAkce	Smolenice
http://linked.open...i/riv/mistoVydani	Bratislava
http://linked.open...i/riv/nazevZdroje	Proceedings ASDAM 2012
http://linked.open...in/vavai/riv/obor	JJ
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...vavai/riv/projekt	Growth and processing of graphene layers on silicon carbide
http://linked.open...UplatneniVysledku	2012
http://linked.open...iv/tvurceVysledku	Macháč, Petr Jurka, V. Náhlík, Josef Janoušek, M. Voves, J. Šobáň, Z.
http://linked.open...vavai/riv/typAkce	EUR - Evropská
http://linked.open.../riv/zahajeniAkce	2012-11-11 (xsd:date)
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Slovenská technická univerzita v Bratislave
https://schema.org/isbn	978-1-4673-1195-3
http://localhost/t...ganizacniJednotka	22310
is http://linked.open...avai/riv/vysledek of	Hydrogen silsesquioxane as a gate dielectric layer for SiC graphene FET

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