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  • In this work, features of graphene layers were studied with the aim to prepare monolayer graphene. Graphene was prepared by the method of epitaxy growth on 4H-SiC. We applied an annealing both in vacuum and in an Ar atmosphere. The formed graphene layers were analyzed by means of Raman spectroscopy and X-ray Photoelectron Spectroscopy (XPS). Monolayer graphene structures were prepared by an annealing at 1555 °C in an Ar atmosphere. Results produced by Raman spectroscopy were confirmed by XPS analysis.
  • In this work, features of graphene layers were studied with the aim to prepare monolayer graphene. Graphene was prepared by the method of epitaxy growth on 4H-SiC. We applied an annealing both in vacuum and in an Ar atmosphere. The formed graphene layers were analyzed by means of Raman spectroscopy and X-ray Photoelectron Spectroscopy (XPS). Monolayer graphene structures were prepared by an annealing at 1555 °C in an Ar atmosphere. Results produced by Raman spectroscopy were confirmed by XPS analysis. (en)
Title
  • Epitaxial graphene on 4H-SiC
  • Epitaxial graphene on 4H-SiC (en)
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  • Epitaxial graphene on 4H-SiC
  • Epitaxial graphene on 4H-SiC (en)
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  • RIV/60461373:22310/12:43894446!RIV13-GA0-22310___
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  • P(GAP108/11/0894)
http://linked.open...vai/riv/dodaniDat
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  • 134614
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  • RIV/60461373:22310/12:43894446
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  • Silicon carbide; XPS analysis; Raman spectroscopy; Graphene (en)
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  • [B80FB802FB65]
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  • Brno
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  • Brno
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  • Proceedings EDS'11 IMAPS CS International Conference
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  • Cichoň, Stanislav
  • Macháč, Petr
  • Mišková, Linda
  • Fidler, Tomáš
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  • Vysoké učení technické v Brně
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  • 978-80-214-4303-7
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  • 22310
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