About: Synthesis of graphene on SiC substrate via Ni-silicidation reactions

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	In this work, the features of graphene layers are studied with the aim of preparing the thinnest layers possible. The graphene layers were prepared by the annealing of Ni/SiC structures. The main advantage of this process is a relatively low temperature compared with the method of graphene epitaxial growth on SiC and short annealing times compared with the chemical vapor deposition method. We prepared graphene layers from several Ni/SiC structures in which the Ni layer thickness ranged from 1 to 200 nm. The parameters of the annealing process (temperature, rate of temperature increase, annealing time) were modified during the experiments. The formed graphene layers were analyzed by means of Raman spectroscopy. From the spectra, the basic parameters of graphene, such as the number of carbon layers and crystallinity. were determined. The annealing of the Ni(200 nm)/SiC structure at 1080 degrees C for 10 s, produced graphene in the form of 3-4 carbon monolayers. The value was verified by X-ray Photoelectron Spectroscopy (XPS). Good agreement was achieved in the results obtained using Raman spectroscopy and XPS. In this work, the features of graphene layers are studied with the aim of preparing the thinnest layers possible. The graphene layers were prepared by the annealing of Ni/SiC structures. The main advantage of this process is a relatively low temperature compared with the method of graphene epitaxial growth on SiC and short annealing times compared with the chemical vapor deposition method. We prepared graphene layers from several Ni/SiC structures in which the Ni layer thickness ranged from 1 to 200 nm. The parameters of the annealing process (temperature, rate of temperature increase, annealing time) were modified during the experiments. The formed graphene layers were analyzed by means of Raman spectroscopy. From the spectra, the basic parameters of graphene, such as the number of carbon layers and crystallinity. were determined. The annealing of the Ni(200 nm)/SiC structure at 1080 degrees C for 10 s, produced graphene in the form of 3-4 carbon monolayers. The value was verified by X-ray Photoelectron Spectroscopy (XPS). Good agreement was achieved in the results obtained using Raman spectroscopy and XPS. (en)
Title	Synthesis of graphene on SiC substrate via Ni-silicidation reactions Synthesis of graphene on SiC substrate via Ni-silicidation reactions (en)
skos:prefLabel	Synthesis of graphene on SiC substrate via Ni-silicidation reactions Synthesis of graphene on SiC substrate via Ni-silicidation reactions (en)
skos:notation	RIV/60461373:22310/12:43894326!RIV13-GA0-22310___
http://linked.open...avai/predkladatel	Fakulta chemické technologie
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(GAP108/11/0894)
http://linked.open...iv/cisloPeriodika	16
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Macháč, Petr Cichoň, Stanislav Mišková, Linda Fidler, Tomáš
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola chemicko-technologická v Praze / Fakulta chemické technologie
http://linked.open...dnocenehoVysledku	172963
http://linked.open...ai/riv/idVysledku	RIV/60461373:22310/12:43894326
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Annealing; Nickel; Silicon carbide; Raman spectroscopy; Graphene (en)
http://linked.open.../riv/klicoveSlovo	Annealing Silicon carbide Raman spectroscopy Graphene Nickel
http://linked.open...odStatuVydavatele	GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV	[294FA807A6C5]
http://linked.open...i/riv/nazevZdroje	Thin Solid Films
http://linked.open...in/vavai/riv/obor	JJ
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Growth and processing of graphene layers on silicon carbide
http://linked.open...UplatneniVysledku	2012
http://linked.open...v/svazekPeriodika	520
http://linked.open...iv/tvurceVysledku	Cichoň, Stanislav Macháč, Petr Mišková, Linda Fidler, Tomáš
http://linked.open...ain/vavai/riv/wos	000305719000019
issn	0040-6090
number of pages	4 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.tsf.2012.03.105
http://localhost/t...ganizacniJednotka	22310
is http://linked.open...avai/riv/vysledek of	Synthesis of graphene on SiC substrate via Ni-silicidation reactions

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