About: Mn DOPING OF GaN LAYERS GROWN BY MOVPE

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	In this contribution we present a growth of Ga1-xMnxN layers by MOVPE. Mn doped GaN layers were grown with and without undoped GaN templates on (0001) sapphire substrates in a quartz horizontal reactor. For the deposition of Ga1-xMnxN layers (MCp)(2)Mn was used as a Mn-precursor The flow of the Mn precursor was 0.2-3.2 mu mol.min(-1). The deposition of Ga1-xMnxN layers was carried out under the pressure of 200 mbar the temperature 1050 degrees C and the V/III ratio of 1360. For the growth of high quality GaN:Mn layers it was necessary to grow these layers on a minimally partially coalesced layer of pure GaN. The direct deposition of GaN:Mn layer on the low temperature GaN buffer layer led to a three-dimensional growth during the whole deposition process. Another investigated parameter was the influence of nitrogen on the layer's properties. A nearly constant ferromagnetic moment persisting up to room temperature was observed on the synthesized thin films. In this contribution we present a growth of Ga1-xMnxN layers by MOVPE. Mn doped GaN layers were grown with and without undoped GaN templates on (0001) sapphire substrates in a quartz horizontal reactor. For the deposition of Ga1-xMnxN layers (MCp)(2)Mn was used as a Mn-precursor The flow of the Mn precursor was 0.2-3.2 mu mol.min(-1). The deposition of Ga1-xMnxN layers was carried out under the pressure of 200 mbar the temperature 1050 degrees C and the V/III ratio of 1360. For the growth of high quality GaN:Mn layers it was necessary to grow these layers on a minimally partially coalesced layer of pure GaN. The direct deposition of GaN:Mn layer on the low temperature GaN buffer layer led to a three-dimensional growth during the whole deposition process. Another investigated parameter was the influence of nitrogen on the layer's properties. A nearly constant ferromagnetic moment persisting up to room temperature was observed on the synthesized thin films. (en)
Title	Mn DOPING OF GaN LAYERS GROWN BY MOVPE Mn DOPING OF GaN LAYERS GROWN BY MOVPE (en)
skos:prefLabel	Mn DOPING OF GaN LAYERS GROWN BY MOVPE Mn DOPING OF GaN LAYERS GROWN BY MOVPE (en)
skos:notation	RIV/60461373:22310/12:43893551!RIV13-GA0-22310___
http://linked.open...avai/predkladatel	Fakulta chemické technologie
http://linked.open...avai/riv/aktivita	P S Z
http://linked.open...avai/riv/aktivity	P(GA104/09/0621), P(GA106/09/0125), S, Z(AV0Z10100521), Z(MSM6046137302)
http://linked.open...iv/cisloPeriodika	2
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Sedmidubský, David Sofer, Zdeněk Jankovský, Ondřej Šimek, Petr
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola chemicko-technologická v Praze / Fakulta chemické technologie
http://linked.open...dnocenehoVysledku	150818
http://linked.open...ai/riv/idVysledku	RIV/60461373:22310/12:43893551
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Semiconducting III-V materials; Magnetic materials; Nitrides; Metalorganic vapor phase epitaxy (en)
http://linked.open.../riv/klicoveSlovo	Nitrides Magnetic materials Metalorganic vapor phase epitaxy Semiconducting III-V materials
http://linked.open...odStatuVydavatele	CZ - Česká republika
http://linked.open...ontrolniKodProRIV	[68939DCE2458]
http://linked.open...i/riv/nazevZdroje	Ceramics-Silikáty
http://linked.open...in/vavai/riv/obor	CA
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	8 (xsd:int)
http://linked.open...vavai/riv/projekt	Preparation and characterization of metal/polymer structures ZnO-based magnetic semiconductors
http://linked.open...UplatneniVysledku	2012
http://linked.open...v/svazekPeriodika	56
http://linked.open...iv/tvurceVysledku	Sofer, Zdeněk Šimek, Petr Maryško, Miroslav Sedmidubský, David Hejtmánek, Jiří Jankovský, Ondřej Mikulics, Martin Václavů, Michal
http://linked.open...ain/vavai/riv/wos	000307678000006
http://linked.open...n/vavai/riv/zamer	Physics and technology of nanostructures, surfaces and thin films Preparation and research of functional materials and material technologies using micro- and nanoscopic methods
issn	0862-5468
number of pages	5 (xsd:int)
http://localhost/t...ganizacniJednotka	22310
is http://linked.open...avai/riv/vysledek of	Mn DOPING OF GaN LAYERS GROWN BY MOVPE

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