About: Investigation properties of GaN layers doped with ions using the transmittance measurement

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Investigation properties of GaN layers doped with ions using the transmittance measurement Investigation properties of GaN layers doped with ions using the transmittance measurement (en) Výzkum vlastností vrstev GaN dotovaných ionty Er3+ a Er3++Yb3+ (cs)
Title	Investigation properties of GaN layers doped with ions using the transmittance measurement Investigation properties of GaN layers doped with ions using the transmittance measurement (en) Výzkum vlastností vrstev GaN dotovaných ionty Er3+ a Er3++Yb3+ (cs)
skos:prefLabel	Investigation properties of GaN layers doped with ions using the transmittance measurement Investigation properties of GaN layers doped with ions using the transmittance measurement (en) Výzkum vlastností vrstev GaN dotovaných ionty Er3+ a Er3++Yb3+ (cs)
skos:notation	RIV/60461373:22310/08:00020128!RIV09-GA0-22310___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(GA102/06/0424)
http://linked.open...vai/riv/dodaniDat	2009
http://linked.open...aciTvurceVysledku	Špirková, Jarmila Hüttel, Ivan
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola chemicko-technologická v Praze / Fakulta chemické technologie
http://linked.open...dnocenehoVysledku	373242
http://linked.open...ai/riv/idVysledku	RIV/60461373:22310/08:00020128
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Optoelectronics; GaN layers; dotation (en)
http://linked.open.../riv/klicoveSlovo	Optoelectronics dotation GaN layers
http://linked.open...ontrolniKodProRIV	[CCB7DF4EDF40]
http://linked.open...v/mistoKonaniAkce	Praha
http://linked.open...i/riv/mistoVydani	Praha
http://linked.open...i/riv/nazevZdroje	Photonics Prague 2008, The 6th International Conference on Photonics, Devices and Systems
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...vavai/riv/projekt	New components of the integrated optics made by the planar hybrid technology
http://linked.open...UplatneniVysledku	2008
http://linked.open...iv/tvurceVysledku	Prajzler, Václav Peřina, V. Špirková, Jarmila Oswald, J. Hüttel, Ivan
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2008-08-27 (xsd:date)
number of pages	6 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Agentura Action M
https://schema.org/isbn	978-80-86742-25-0
http://localhost/t...ganizacniJednotka	22310
is http://linked.open...avai/riv/vysledek of	Investigation properties of GaN layers doped with ions using the transmittance measurement Investigation properties of GaN layers doped with ions using the transmittance measurement Investigation properties of GaN layers doped with ions using the transmittance measurement Investigation properties of GaN layers doped with ions using the transmittance measurement

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