About: Calculated optical properties of GaX (X=P, As, Sb) under hydrostatic pressure

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The hydrostatic pressure dependence of the principal energy gaps and of the optical properties of GaX (X = P, As and Sb) has been calculated using the full potential-linearized augmented plane wave (FP-LAPW) method. The generalized gradient approximation (GGA) for the exchange and correlation potential is applied. Also, we have used the Engel-Vosko GGA formalism, which optimizes the corresponding potential for band-structure and the optical properties calculations. Structural properties such as equilibrium lattice constants, the bulk modulus, and its pressure derivatives were calculated for GaP, GaAs, and GaSb in the zinc-blende structure (ZB). We have found that the results of the structural properties calculations are in agreement with those of ab initio and experimental data. In general, the pressure dependence of the principal energy gaps is compared to other values. The same is for the pressure coefficient. However, for the same structure, the comparison of our results with those of experimental and theoretical calculations shows good agreement. On the other hand, the effect of the applied pressure is clearly seen in the optical properties especially near the energy transition regions. The hydrostatic pressure dependence of the principal energy gaps and of the optical properties of GaX (X = P, As and Sb) has been calculated using the full potential-linearized augmented plane wave (FP-LAPW) method. The generalized gradient approximation (GGA) for the exchange and correlation potential is applied. Also, we have used the Engel-Vosko GGA formalism, which optimizes the corresponding potential for band-structure and the optical properties calculations. Structural properties such as equilibrium lattice constants, the bulk modulus, and its pressure derivatives were calculated for GaP, GaAs, and GaSb in the zinc-blende structure (ZB). We have found that the results of the structural properties calculations are in agreement with those of ab initio and experimental data. In general, the pressure dependence of the principal energy gaps is compared to other values. The same is for the pressure coefficient. However, for the same structure, the comparison of our results with those of experimental and theoretical calculations shows good agreement. On the other hand, the effect of the applied pressure is clearly seen in the optical properties especially near the energy transition regions. (en)
Title	Calculated optical properties of GaX (X=P, As, Sb) under hydrostatic pressure Calculated optical properties of GaX (X=P, As, Sb) under hydrostatic pressure (en)
skos:prefLabel	Calculated optical properties of GaX (X=P, As, Sb) under hydrostatic pressure Calculated optical properties of GaX (X=P, As, Sb) under hydrostatic pressure (en)
skos:notation	RIV/60076658:12640/11:43881949!RIV12-MSM-12640___
http://linked.open...avai/predkladatel	Ústav fyzikální biologie
http://linked.open...avai/riv/aktivita	N
http://linked.open...avai/riv/aktivity	N
http://linked.open...iv/cisloPeriodika	4
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Reshak, Ali Hussain
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Jihočeská univerzita v Českých Budějovicích / Ústav fyzikální biologie
http://linked.open...dnocenehoVysledku	189005
http://linked.open...ai/riv/idVysledku	RIV/60076658:12640/11:43881949
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	DIAMOND; DEPENDENCE; PARAMETERS; INAS; STATE; IONICITY; BAND-STRUCTURE; PHASE-TRANSITIONS; TETRAHEDRAL SEMICONDUCTORS; V ZINCBLENDE SEMICONDUCTORS (en)
http://linked.open.../riv/klicoveSlovo	STATE BAND-STRUCTURE DEPENDENCE DIAMOND INAS IONICITY PARAMETERS PHASE-TRANSITIONS TETRAHEDRAL SEMICONDUCTORS V ZINCBLENDE SEMICONDUCTORS
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[20AA160AE0C5]
http://linked.open...i/riv/nazevZdroje	Applied Physics A - Materials Science and Processing
http://linked.open...in/vavai/riv/obor	BO
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	2 (xsd:int)
http://linked.open...UplatneniVysledku	2011
http://linked.open...v/svazekPeriodika	104
http://linked.open...iv/tvurceVysledku	Al-Douri, Y. Reshak, Ali Hussain
http://linked.open...ain/vavai/riv/wos	000293972100023
issn	0947-8396
number of pages	9 (xsd:int)
http://bibframe.org/vocab/doi	10.1007/s00339-011-6400-6
http://localhost/t...ganizacniJednotka	12640
is http://linked.open...avai/riv/vysledek of	Calculated optical properties of GaX (X=P, As, Sb) under hydrostatic pressure Calculated optical properties of GaX (X=P, As, Sb) under hydrostatic pressure

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