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  • Zinc Oxide (ZnO) is a wide bandgap semiconductor material which can be successfully used for wide variety of applications such as biosensors and acoustic resonator devices. ZnO normally crystallizes in the wurtzite structure with c-axis (002) preferred orientation. However, for bio-sensing in liquids, it is necessary to generate a shear horizontal mode wave, where the wave displacement is within the plane of the crystal surface. For generation of a shear horizontal wave, a-axis film textures such as the (110) or (100) are necessary. This work is focused on the preferred orientation control of ZnO film prepared by radio frequency magnetron sputtering. It was found that preferred orientation can be controlled by energy delivered to unit volume of the film at suitable substrate temperature. We have identified three different deposition regimes leading to distinctive preferred orientation.
  • Zinc Oxide (ZnO) is a wide bandgap semiconductor material which can be successfully used for wide variety of applications such as biosensors and acoustic resonator devices. ZnO normally crystallizes in the wurtzite structure with c-axis (002) preferred orientation. However, for bio-sensing in liquids, it is necessary to generate a shear horizontal mode wave, where the wave displacement is within the plane of the crystal surface. For generation of a shear horizontal wave, a-axis film textures such as the (110) or (100) are necessary. This work is focused on the preferred orientation control of ZnO film prepared by radio frequency magnetron sputtering. It was found that preferred orientation can be controlled by energy delivered to unit volume of the film at suitable substrate temperature. We have identified three different deposition regimes leading to distinctive preferred orientation. (en)
Title
  • Investigation of Preferred Orientation of ZnO Thin Films Prepared by Magnetron Sputtering
  • Investigation of Preferred Orientation of ZnO Thin Films Prepared by Magnetron Sputtering (en)
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  • Investigation of Preferred Orientation of ZnO Thin Films Prepared by Magnetron Sputtering
  • Investigation of Preferred Orientation of ZnO Thin Films Prepared by Magnetron Sputtering (en)
skos:notation
  • RIV/49777513:23640/14:43924054!RIV15-MSM-23640___
http://linked.open...avai/riv/aktivita
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  • P(ED2.1.00/03.0088)
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  • 12
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  • 22752
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  • RIV/49777513:23640/14:43924054
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  • Thin Films; Magnetron Sputtering; Preferred Orientation; Structure; ZnO (en)
http://linked.open.../riv/klicoveSlovo
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  • CA - Kanada
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  • [A788A5932EE2]
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  • Sensor Letters
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  • 12
http://linked.open...iv/tvurceVysledku
  • Novák, Petr
  • Netrvalová, Marie
  • Říha, Jan
  • Šutta, Pavol
  • Medlín, Rostislav
issn
  • 1546-198X
number of pages
http://bibframe.org/vocab/doi
  • 10.1166/sl.2014.3399
http://localhost/t...ganizacniJednotka
  • 23640
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