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  • Zinc Oxide (ZnO) is a wide bandgap semiconductor material which can be successfully used for wide variety of potential applications such as biosensors or acoustic resonator devices. ZnO normally crystallizes in the wurtzite structure with c-axis (001) preferred orientation. However, for bio-sensing in liquids, it is necessary to generate a shear horizontal mode wave, where the wave displacement is within the plane of the crystal surface. For generation of such a shear horizontal wave, a-axis film textures such as the (110) or (100) is necessary. This work is focused on the preferred orientation control of ZnO film prepared by RF magnetron sputtering. It is found that preferred orientation can be controlled by substrate bias and substrate temperature during deposition without the use of expensive crystalline substrates. There are three areas of operating parameters when the structure of the ZnO films is dominated by different preferred orientation. Moreover, the film annealing was performed to enhance the film structure.
  • Zinc Oxide (ZnO) is a wide bandgap semiconductor material which can be successfully used for wide variety of potential applications such as biosensors or acoustic resonator devices. ZnO normally crystallizes in the wurtzite structure with c-axis (001) preferred orientation. However, for bio-sensing in liquids, it is necessary to generate a shear horizontal mode wave, where the wave displacement is within the plane of the crystal surface. For generation of such a shear horizontal wave, a-axis film textures such as the (110) or (100) is necessary. This work is focused on the preferred orientation control of ZnO film prepared by RF magnetron sputtering. It is found that preferred orientation can be controlled by substrate bias and substrate temperature during deposition without the use of expensive crystalline substrates. There are three areas of operating parameters when the structure of the ZnO films is dominated by different preferred orientation. Moreover, the film annealing was performed to enhance the film structure. (en)
Title
  • Self-texture control of Zno films prepared by reactive RF magnetron sputtering
  • Self-texture control of Zno films prepared by reactive RF magnetron sputtering (en)
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  • Self-texture control of Zno films prepared by reactive RF magnetron sputtering
  • Self-texture control of Zno films prepared by reactive RF magnetron sputtering (en)
skos:notation
  • RIV/49777513:23640/14:43923268!RIV15-MSM-23640___
http://linked.open...avai/riv/aktivita
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  • P(ED2.1.00/03.0088)
http://linked.open...vai/riv/dodaniDat
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  • 44362
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  • RIV/49777513:23640/14:43923268
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  • thin films; magnetron sputtering; preferred orientation; structure; ZnO (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [9368EC059E4B]
http://linked.open...v/mistoKonaniAkce
  • Praha
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  • Key Engineering Materials
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http://linked.open...iv/tvurceVysledku
  • Novák, Petr
  • Netrvalová, Marie
  • Říha, Jan
  • Šutta, Pavol
  • Medlín, Rostislav
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
issn
  • 1013-9826
number of pages
http://bibframe.org/vocab/doi
  • 10.4028/www.scientific.net/KEM.605.219
http://purl.org/ne...btex#hasPublisher
  • Trans Tech Publications LTD
https://schema.org/isbn
  • 978-3-03835-051-4
http://localhost/t...ganizacniJednotka
  • 23640
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