About: Microstructure Determination of mc-Si:H Films Analysing the Breadths of Diffraction and Sectral Lines of XRD, FTIR and Raman Spectroscopies using the Voigt function     Goto   Sponge   NotDistinct   Permalink

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  • Microcrystalline silicon is very important material for silicon based thin-film solar cells. It is especially convenient for tandem silicon solar cells using a-Si:H/?c-Si:H double- or triple-junction technology. Because the ?c-Si:H is a composition of amorphous and crystalline phases, its physical properties are strongly influenced by the volume content of the crystalline phase and by the hydrogen content in the films. Experimental diffraction and spectral lines are the convolution of various functions arising from the instrumental factors and specimen imperfections. The instrumental line profile is approximately Cauchy, whereas the profile arising from the lattice strain is more nearly Gaussian. The function formed from these profiles is known as a Voigt function. The films were investigated by X-ray diffraction, Raman and FTIR spectroscopies using the line profile analysis. Real structure parameters of the films (crystalline volume content, micro-strains, grain sizes, hydrogen content and distribution) carried out from the analysis indicated good agreement between the results from UV/Vis spectrophotometry and spectroscopic ellipsometry.
  • Microcrystalline silicon is very important material for silicon based thin-film solar cells. It is especially convenient for tandem silicon solar cells using a-Si:H/?c-Si:H double- or triple-junction technology. Because the ?c-Si:H is a composition of amorphous and crystalline phases, its physical properties are strongly influenced by the volume content of the crystalline phase and by the hydrogen content in the films. Experimental diffraction and spectral lines are the convolution of various functions arising from the instrumental factors and specimen imperfections. The instrumental line profile is approximately Cauchy, whereas the profile arising from the lattice strain is more nearly Gaussian. The function formed from these profiles is known as a Voigt function. The films were investigated by X-ray diffraction, Raman and FTIR spectroscopies using the line profile analysis. Real structure parameters of the films (crystalline volume content, micro-strains, grain sizes, hydrogen content and distribution) carried out from the analysis indicated good agreement between the results from UV/Vis spectrophotometry and spectroscopic ellipsometry. (en)
Title
  • Microstructure Determination of mc-Si:H Films Analysing the Breadths of Diffraction and Sectral Lines of XRD, FTIR and Raman Spectroscopies using the Voigt function
  • Microstructure Determination of mc-Si:H Films Analysing the Breadths of Diffraction and Sectral Lines of XRD, FTIR and Raman Spectroscopies using the Voigt function (en)
skos:prefLabel
  • Microstructure Determination of mc-Si:H Films Analysing the Breadths of Diffraction and Sectral Lines of XRD, FTIR and Raman Spectroscopies using the Voigt function
  • Microstructure Determination of mc-Si:H Films Analysing the Breadths of Diffraction and Sectral Lines of XRD, FTIR and Raman Spectroscopies using the Voigt function (en)
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  • RIV/49777513:23640/12:43916616!RIV13-MSM-23640___
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  • P(ED2.1.00/03.0088)
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  • 150427
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  • RIV/49777513:23640/12:43916616
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  • a-Si:H, ?c-Si:H, optical properties (en)
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  • [38EC2BED45A5]
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  • Frankfurt, Německo
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  • München
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  • Proceedings 27th European Photovoltaic Solar Energy Conference and Exhibition
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  • Netrvalová, Marie
  • Očenášek, Jan
  • Šutta, Pavol
  • Prušáková, Lucie
  • Müllerová, Jarmila
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  • WIP
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  • 3-936338-28-0
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  • 23640
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