About: Study of ZnO films grown with different dopants - physical properties and their comparison

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Transparent and electrically conductive (TCO) thin films of ZnO:Al, ZnO:Ga and ZnO:Sc, used in solar cells as well as optoelectronic devices, have been successfully deposited by rf magnetron sputter deposition using ZnO(98%)/X2O3 (2%) ceramic target, X = {Al, Ga, Sc}, in the inert atmosphere of argon. In this contribution we focused on the changes in physical properties and their comparison in dependence on doping element. The XRD analyses, four probe measurements and UV-VIS spectroscopy were applied to investigate the structure (texture, lattice stress, grain size), electrical (resistivity) and optical (transmittance, optical band gap) properties of TCOs on the glass substrates. Transparent and electrically conductive (TCO) thin films of ZnO:Al, ZnO:Ga and ZnO:Sc, used in solar cells as well as optoelectronic devices, have been successfully deposited by rf magnetron sputter deposition using ZnO(98%)/X2O3 (2%) ceramic target, X = {Al, Ga, Sc}, in the inert atmosphere of argon. In this contribution we focused on the changes in physical properties and their comparison in dependence on doping element. The XRD analyses, four probe measurements and UV-VIS spectroscopy were applied to investigate the structure (texture, lattice stress, grain size), electrical (resistivity) and optical (transmittance, optical band gap) properties of TCOs on the glass substrates. (en)
Title	Study of ZnO films grown with different dopants - physical properties and their comparison Study of ZnO films grown with different dopants - physical properties and their comparison (en)
skos:prefLabel	Study of ZnO films grown with different dopants - physical properties and their comparison Study of ZnO films grown with different dopants - physical properties and their comparison (en)
skos:notation	RIV/49777513:23640/10:00503644!RIV11-MSM-23640___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(1M06031)
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Netrvalová, Marie Šutta, Pavol Prušáková, Lucie
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Západočeská univerzita v Plzni / Nové technologie - výzkumné centrum
http://linked.open...dnocenehoVysledku	290882
http://linked.open...ai/riv/idVysledku	RIV/49777513:23640/10:00503644
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	ZnO:Al; ZnO:Ga; ZnO:Sc; physical properties (en)
http://linked.open.../riv/klicoveSlovo	ZnO:Ga ZnO:Al physical properties ZnO:Sc
http://linked.open...ontrolniKodProRIV	[5DBE4EC8254C]
http://linked.open...v/mistoKonaniAkce	Smolenice Castle, Slovakia
http://linked.open...i/riv/mistoVydani	New York
http://linked.open...i/riv/nazevZdroje	ASDAM 2010
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...vavai/riv/projekt	Materials and components for environment protection
http://linked.open...UplatneniVysledku	2010
http://linked.open...iv/tvurceVysledku	Netrvalová, Marie Šutta, Pavol Prušáková, Lucie
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2010-01-01 (xsd:date)
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	IEEE Nuclear and Plasma Sciences Society
https://schema.org/isbn	978-1-4244-8572-7
http://localhost/t...ganizacniJednotka	23640
is http://linked.open...avai/riv/vysledek of	Study of ZnO films grown with different dopants - physical properties and their comparison Study of ZnO films grown with different dopants - physical properties and their comparison Study of ZnO films grown with different dopants - physical properties and their comparison

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