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  • Technology of amorphous hydrogenated silicon (a-Si:H) thin films is a subject of interest of many researchers. This paper deals with the re-crystallization processes in a-Si:H thin films prepared by plasma enhanced chemical vapour deposition (PECVD) using a SAMCO PD-220N unit. Evaluation of crystallization process was monitored in a high temperature chamber AP1200 by using ?in-situ? X-ray diffraction (XRD). The experiments have given information about phase transformation from the amorphous to polycrystalline phase and were carried out at temperatures in the range of 580 °C to 620 °C. The average crystalline size of crystallized films was found from 40 to 50 nm. Structural properties of the initial amorphous and re-crystallized films were also investigated by Raman spectroscopy. Optical properties (refractive indices, extinction coefficients) of a-Si:H and poly-Si films were analyzed by UV Vis spectrophotometry. The absorption properties of the films were carried out from the UV Vis experimental data.
  • Technology of amorphous hydrogenated silicon (a-Si:H) thin films is a subject of interest of many researchers. This paper deals with the re-crystallization processes in a-Si:H thin films prepared by plasma enhanced chemical vapour deposition (PECVD) using a SAMCO PD-220N unit. Evaluation of crystallization process was monitored in a high temperature chamber AP1200 by using ?in-situ? X-ray diffraction (XRD). The experiments have given information about phase transformation from the amorphous to polycrystalline phase and were carried out at temperatures in the range of 580 °C to 620 °C. The average crystalline size of crystallized films was found from 40 to 50 nm. Structural properties of the initial amorphous and re-crystallized films were also investigated by Raman spectroscopy. Optical properties (refractive indices, extinction coefficients) of a-Si:H and poly-Si films were analyzed by UV Vis spectrophotometry. The absorption properties of the films were carried out from the UV Vis experimental data. (en)
Title
  • Study of Re-crystallization Processes in Amorphous Silicon Films
  • Study of Re-crystallization Processes in Amorphous Silicon Films (en)
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  • Study of Re-crystallization Processes in Amorphous Silicon Films
  • Study of Re-crystallization Processes in Amorphous Silicon Films (en)
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  • RIV/49777513:23640/10:00503315!RIV11-MSM-23640___
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  • P(1M06031), S
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  • 290825
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  • RIV/49777513:23640/10:00503315
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  • re-crystallization; amorphous silicon (a-Si) (en)
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  • [62F65EC0F200]
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  • Niš, Serbia
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  • Niš
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  • Proceedings 27th International Conference on Microelectronics
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  • Netrvalová, Marie
  • Šutta, Pavol
  • Prušáková, Lucie
  • Müllerová, Jarmila
  • Vavruňková, Veronika
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  • Electron Devices Society of the Institute of Electrical and Electronics Engineers
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  • 978-1-4244-7198-0
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  • 23640
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