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  • Thin-film poly-crystalline silicon (poly c-Si) on glass obtained by crystallization of an amorphous silicon (a-Si) film is a promising material for low cost, high efficiency solar cells. Our approach to obtain this material is to crystallize a-Si films on glass by solid phase crystallization (SPC). As the grain size of SPC poly c-Si films will be smaller than that of multi-crystalline wafers, lower solar cell efficiencies are expected for this technology. Despite the smaller grain size, a 2-micron-thick polycrystalline silicon solar cell with light trapping was shown to have a conversion efficiency of more than 10% [1]. Obtainable efficiencies up to 15% are expected for solar cells made using SPC of a-Si:H films. Expanding thermal plasma chemical vapor deposition (ETP-CVD) was used to prepare hydrogenated a-Si films; this technique is chosen because the deposition rates are much higher than with plasma enhanced CVD. A-Si:H films with different hydrogen contents were annealed using temperatures ranging
  • Thin-film poly-crystalline silicon (poly c-Si) on glass obtained by crystallization of an amorphous silicon (a-Si) film is a promising material for low cost, high efficiency solar cells. Our approach to obtain this material is to crystallize a-Si films on glass by solid phase crystallization (SPC). As the grain size of SPC poly c-Si films will be smaller than that of multi-crystalline wafers, lower solar cell efficiencies are expected for this technology. Despite the smaller grain size, a 2-micron-thick polycrystalline silicon solar cell with light trapping was shown to have a conversion efficiency of more than 10% [1]. Obtainable efficiencies up to 15% are expected for solar cells made using SPC of a-Si:H films. Expanding thermal plasma chemical vapor deposition (ETP-CVD) was used to prepare hydrogenated a-Si films; this technique is chosen because the deposition rates are much higher than with plasma enhanced CVD. A-Si:H films with different hydrogen contents were annealed using temperatures ranging (en)
Title
  • Formation of thin-film crystalline silicon on glass observed by in-situ XRD
  • Formation of thin-film crystalline silicon on glass observed by in-situ XRD (en)
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  • Formation of thin-film crystalline silicon on glass observed by in-situ XRD
  • Formation of thin-film crystalline silicon on glass observed by in-situ XRD (en)
skos:notation
  • RIV/49777513:23640/10:00503276!RIV11-MSM-23640___
http://linked.open...avai/riv/aktivita
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  • P(1M06031)
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  • 1
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  • 259573
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  • RIV/49777513:23640/10:00503276
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  • x-ray diffraction; Silicon; Crystallization; Solar cells (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • NL - Nizozemsko
http://linked.open...ontrolniKodProRIV
  • [0A802E671578]
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  • Energy Procedia
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  • 2
http://linked.open...iv/tvurceVysledku
  • Šutta, Pavol
  • Zeman, Miro
  • Vavruňková, Veronika
  • Westra, J. M.
  • van Swaaij, R. A. C. M. M.
issn
  • 1876-6102
number of pages
http://localhost/t...ganizacniJednotka
  • 23640
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