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  • In this paper the possibility to form thin films with the inclined crystalic texture by the RF diode sputtering is presented. Two oblique deposition arrangements were used for the preparation of ZnO:Ga thin films with the deviation of their columnar structures in the range of 12 % 15 deg to the substrate normal, i.e. an inclination of their ordinary optical axis. The inclined texture of films has changed their optical transmittance spectra as well as it caused the blue-shift and the change of the optical band-gap.
  • In this paper the possibility to form thin films with the inclined crystalic texture by the RF diode sputtering is presented. Two oblique deposition arrangements were used for the preparation of ZnO:Ga thin films with the deviation of their columnar structures in the range of 12 % 15 deg to the substrate normal, i.e. an inclination of their ordinary optical axis. The inclined texture of films has changed their optical transmittance spectra as well as it caused the blue-shift and the change of the optical band-gap. (en)
Title
  • Sputtering of ZnO:Ga Thin Films with the Inclined Crystalic Texture
  • Sputtering of ZnO:Ga Thin Films with the Inclined Crystalic Texture (en)
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  • Sputtering of ZnO:Ga Thin Films with the Inclined Crystalic Texture
  • Sputtering of ZnO:Ga Thin Films with the Inclined Crystalic Texture (en)
skos:notation
  • RIV/49777513:23640/10:00503212!RIV11-MSM-23640___
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  • P(1M06031)
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  • 289430
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  • RIV/49777513:23640/10:00503212
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  • ZnO:Ga; sputtering; oblique structure (en)
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  • [B5AFC64918D6]
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  • Niš, Serbia
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  • Niš
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  • Proceedings 27th International Conference on Microelectronics
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  • Novotný, Ivan
  • Netrvalová, Marie
  • Šutta, Pavol
  • Flickyngerová, Soňa
  • Tvarožek, Vladimír
  • Spiess, L.
  • Schaar, P.
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  • Electron Devices Society of the Institute of Electrical and Electronics Engineers, inc.
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  • 978-1-4244-7198-0
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  • 23640
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