About: Modification of AZO thin-film properties by annealing and ion etching

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Description	Effects of annealing and ion etching on the structural, electrical and optical properties of sputtered ZnO:Al (AZO) thin films were investigated. The post-deposition annealing at temperatures TA = 200?400 °C in the forming gas (80% N2/20% H2) for 1 h and ion RF-sputter etching after annealing were used. Ion-sputter etching rate was 7 nm/min. The surface topography changed noticeably after ion-sputter etching: the surface of the sample was rougher (Ra = 33 nm) in comparison with annealed sample only (Ra = 9 nm). After the post-deposition annealing temperature TA = 400 °C and ion-sputter etching thin films have higher integral transmittance (in the range of λ = 400?1000 nm) than non-etched samples. The figure of merit (F) became higher with increase of annealing temperature and the maximum value was F = 8%/Ω at TA = 400 °C (Rs = 10 Ω, Tint = 86%). Effects of annealing and ion etching on the structural, electrical and optical properties of sputtered ZnO:Al (AZO) thin films were investigated. The post-deposition annealing at temperatures TA = 200?400 °C in the forming gas (80% N2/20% H2) for 1 h and ion RF-sputter etching after annealing were used. Ion-sputter etching rate was 7 nm/min. The surface topography changed noticeably after ion-sputter etching: the surface of the sample was rougher (Ra = 33 nm) in comparison with annealed sample only (Ra = 9 nm). After the post-deposition annealing temperature TA = 400 °C and ion-sputter etching thin films have higher integral transmittance (in the range of λ = 400?1000 nm) than non-etched samples. The figure of merit (F) became higher with increase of annealing temperature and the maximum value was F = 8%/Ω at TA = 400 °C (Rs = 10 Ω, Tint = 86%). (en)
Title	Modification of AZO thin-film properties by annealing and ion etching Modification of AZO thin-film properties by annealing and ion etching (en)
skos:prefLabel	Modification of AZO thin-film properties by annealing and ion etching Modification of AZO thin-film properties by annealing and ion etching (en)
skos:notation	RIV/49777513:23640/10:00503188!RIV11-MSM-23640___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(1M06031)
http://linked.open...iv/cisloPeriodika	1
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Netrvalová, Marie Šutta, Pavol Prušáková, Lucie
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Západočeská univerzita v Plzni / Nové technologie - výzkumné centrum
http://linked.open...dnocenehoVysledku	272222
http://linked.open...ai/riv/idVysledku	RIV/49777513:23640/10:00503188
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	ZnO:Al; RF diode sputtering; annealing; ion etching (en)
http://linked.open.../riv/klicoveSlovo	RF diode sputtering ion etching annealing ZnO:Al
http://linked.open...odStatuVydavatele	GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV	[B1917EAA8494]
http://linked.open...i/riv/nazevZdroje	Vacuum
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...vavai/riv/projekt	Materials and components for environment protection
http://linked.open...UplatneniVysledku	2010
http://linked.open...v/svazekPeriodika	84
http://linked.open...iv/tvurceVysledku	Novotný, Ivan Netrvalová, Marie Šutta, Pavol Prušáková, Lucie Flickyngerová, Soňa Tvarožek, Vladimír
http://linked.open...ain/vavai/riv/wos	000270625900054
issn	0042-207X
number of pages	3 (xsd:int)
http://localhost/t...ganizacniJednotka	23640
is http://linked.open...avai/riv/vysledek of	Modification of AZO thin-film properties by annealing and ion etching Modification of AZO thin-film properties by annealing and ion etching Modification of AZO thin-film properties by annealing and ion etching

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