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Description
| - The crystallization process of amorphous silicon (a-Si) and hydrogenated a-Si (a-Si:H) films by solid phase crystallization (SPC) was monitored by in-situ X-ray diffraction (XRD). The expanding thermal plasma CVD (ETP CVD) and electron beam (EB) evaporation were used for the deposition of a-Si:H and a-Si films, respectively. The properties of the a-Si(:H) films were determined prior to crystallization by Fourier transform infrared spectroscopy, Raman spectroscopy and XRD. The crystallization process was investigated by using a high temperature chamber adapted for ?in situ? monitoring by XRD. These experiments were carried out at temperatures in the range of 580 to 620 °C and provided us with information about the transition of the amorphous to the polycrystalline state. The transition behavior differed for films with and without the presence of hydrogen. The presence of hydrogen affected the annealing time required for full crystallization. The phase transformation is slightly influenced by the presen
- The crystallization process of amorphous silicon (a-Si) and hydrogenated a-Si (a-Si:H) films by solid phase crystallization (SPC) was monitored by in-situ X-ray diffraction (XRD). The expanding thermal plasma CVD (ETP CVD) and electron beam (EB) evaporation were used for the deposition of a-Si:H and a-Si films, respectively. The properties of the a-Si(:H) films were determined prior to crystallization by Fourier transform infrared spectroscopy, Raman spectroscopy and XRD. The crystallization process was investigated by using a high temperature chamber adapted for ?in situ? monitoring by XRD. These experiments were carried out at temperatures in the range of 580 to 620 °C and provided us with information about the transition of the amorphous to the polycrystalline state. The transition behavior differed for films with and without the presence of hydrogen. The presence of hydrogen affected the annealing time required for full crystallization. The phase transformation is slightly influenced by the presen (en)
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Title
| - Crystallization process of amorphous silicon films on glass monitored by in-situ XRD
- Crystallization process of amorphous silicon films on glass monitored by in-situ XRD (en)
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skos:prefLabel
| - Crystallization process of amorphous silicon films on glass monitored by in-situ XRD
- Crystallization process of amorphous silicon films on glass monitored by in-situ XRD (en)
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skos:notation
| - RIV/49777513:23640/09:00502543!RIV10-MSM-23640___
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/49777513:23640/09:00502543
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - x-ray diffraction; thin-film; crystallization (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...ontrolniKodProRIV
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http://linked.open...v/mistoKonaniAkce
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http://linked.open...i/riv/mistoVydani
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http://linked.open...i/riv/nazevZdroje
| - 24th European Photovoltaic Solar Energy Conference and Exhibition
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...iv/tvurceVysledku
| - Zeman, M.
- Šutta, Pavol
- Vavruňková, Veronika
- Westra, J. M.
- van Swaaij, R.A.C.M.M.
- Gall, S.
- Sontheimer, T.
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http://linked.open...vavai/riv/typAkce
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http://linked.open.../riv/zahajeniAkce
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number of pages
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http://purl.org/ne...btex#hasPublisher
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https://schema.org/isbn
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http://localhost/t...ganizacniJednotka
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is http://linked.open...avai/riv/vysledek
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