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  • A systematic structural analysis was carried out on amorphous silicon films prepared from hydrogen-diluted silane using plasma-enhanced chemical vapor deposition. Hydrogen dilution of silane during the growth of a-Si:H absorber layers is used to suppress light-induced degradation of a-Si:H solar cells. Transmission electron microscopy (TEM) shows that for higher hydrogen dilution ratios the growth of films becomes strongly inhomogeneous and the transition from amorphous to microcrystalline phase occurs at a smaller thickness. A detailed X-ray diffraction (XRD) analysis of the amorphous films reveals that the strongest peak in the XRD patterns is located around 27.5° and corresponds to the signal from the ordered domains of tetragonal silicon hydride and not from cubic silicon crystallites. The full width at half maximum of this peak narrows from 5.1° to 4.8° as the ratio of hydrogen to silane flow (R) increases to 20 and does not change significantly for higher hydrogen dilutions. The presence of sili
  • A systematic structural analysis was carried out on amorphous silicon films prepared from hydrogen-diluted silane using plasma-enhanced chemical vapor deposition. Hydrogen dilution of silane during the growth of a-Si:H absorber layers is used to suppress light-induced degradation of a-Si:H solar cells. Transmission electron microscopy (TEM) shows that for higher hydrogen dilution ratios the growth of films becomes strongly inhomogeneous and the transition from amorphous to microcrystalline phase occurs at a smaller thickness. A detailed X-ray diffraction (XRD) analysis of the amorphous films reveals that the strongest peak in the XRD patterns is located around 27.5° and corresponds to the signal from the ordered domains of tetragonal silicon hydride and not from cubic silicon crystallites. The full width at half maximum of this peak narrows from 5.1° to 4.8° as the ratio of hydrogen to silane flow (R) increases to 20 and does not change significantly for higher hydrogen dilutions. The presence of sili (en)
Title
  • Structural properties of amorphous silicon prepared from hydrogen-diluted silane
  • Structural properties of amorphous silicon prepared from hydrogen-diluted silane (en)
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  • Structural properties of amorphous silicon prepared from hydrogen-diluted silane
  • Structural properties of amorphous silicon prepared from hydrogen-diluted silane (en)
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  • RIV/49777513:23640/09:00502067!RIV10-MSM-23640___
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  • P(1M06031)
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  • 28-30
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  • 344156
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  • RIV/49777513:23640/09:00502067
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  • hydrogen-diluted amorphous silicon; X-ray diffraction; structural analysis; solar cell (en)
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  • GB - Spojené království Velké Británie a Severního Irska
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  • [CE71A0FC5679]
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  • Philosophical Magazine
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  • 89
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  • Šutta, Pavol
  • Zeman, Miro
  • Van Elzakker, Gijs
  • Tichelaar, Frans
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  • 000271871300003
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  • 1478-6435
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  • 23640
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