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  • We report results obtained from measurements of optical transmittance spectra carried out on a series of silicon thin films deposited by plasma-enhanced chemical vapour deposition (PECVD) from silane diluted with hydrogen. Hydrogen dilution of silane results in an inhomogeneous growth during which the material evolves from amorphous hydrogenated silicon (a-Si:H) to microcrystalline hydrogenated silicon (μc-Si:H). Spectral refractive indices and absorption coefficients were determined from transmittance spectra. The spectral absorption coefficients were used to determine the Tauc optical band gap energy, the B factor of the Tauc plots, E04 (energy at which the absorption coefficient is equal to 104 cm-1), and the Urbach energy as a function of the hydrogen dilution. The results were correlated with microstructure, namely volume fractions of the amorphous and crystalline phase with voids, and with the grain size.
  • We report results obtained from measurements of optical transmittance spectra carried out on a series of silicon thin films deposited by plasma-enhanced chemical vapour deposition (PECVD) from silane diluted with hydrogen. Hydrogen dilution of silane results in an inhomogeneous growth during which the material evolves from amorphous hydrogenated silicon (a-Si:H) to microcrystalline hydrogenated silicon (μc-Si:H). Spectral refractive indices and absorption coefficients were determined from transmittance spectra. The spectral absorption coefficients were used to determine the Tauc optical band gap energy, the B factor of the Tauc plots, E04 (energy at which the absorption coefficient is equal to 104 cm-1), and the Urbach energy as a function of the hydrogen dilution. The results were correlated with microstructure, namely volume fractions of the amorphous and crystalline phase with voids, and with the grain size. (en)
Title
  • Optical absorption in PECVD deposited thin hydrogenated silicon in light of ordering effects
  • Optical absorption in PECVD deposited thin hydrogenated silicon in light of ordering effects (en)
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  • Optical absorption in PECVD deposited thin hydrogenated silicon in light of ordering effects
  • Optical absorption in PECVD deposited thin hydrogenated silicon in light of ordering effects (en)
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  • RIV/49777513:23640/09:00501545!RIV10-MSM-23640___
http://linked.open...avai/riv/aktivita
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  • P(1M06031)
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  • 2
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  • 331799
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  • RIV/49777513:23640/09:00501545
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  • thin-film silicon; absorption coefficient; optical band gap energy; volume fraction (en)
http://linked.open.../riv/klicoveSlovo
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  • PL - Polská republika
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  • [09C57F12CDE4]
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  • Central European Journal of Physics
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  • 7
http://linked.open...iv/tvurceVysledku
  • Šutta, Pavol
  • Müllerová, Jarmila
  • Vavruňková, Veronika
http://linked.open...ain/vavai/riv/wos
  • 000265522000019
issn
  • 1895-1082
number of pages
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  • 23640
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