About: Influence of nitrogen-argon gas mixtures on reactive magnetron sputtering of hard Si-C-N films     Goto   Sponge   NotDistinct   Permalink

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Description
  • Si-C-N films were deposited on p-type Si substrates by dc magnetron co-sputtering of silicon and carbon using a single sputter target with variable Si/C area ratios in nitrogen-argon mixtures. The film characteristics were primarily controlled by the argon concentration in the gas mixture at a fixed 40% silicon fraction in the magnetron erosion track area. The total pressure and the discharge current on the magnetron target were held constant at P=0.5Pa and Im=1A, the substrate temperature was adjusted at Ts=600°C by an ohmic heater and the rf-induced negative substrate bias voltage, Ub was -500V
  • Si-C-N films were deposited on p-type Si substrates by dc magnetron co-sputtering of silicon and carbon using a single sputter target with variable Si/C area ratios in nitrogen-argon mixtures. The film characteristics were primarily controlled by the argon concentration in the gas mixture at a fixed 40% silicon fraction in the magnetron erosion track area. The total pressure and the discharge current on the magnetron target were held constant at P=0.5Pa and Im=1A, the substrate temperature was adjusted at Ts=600°C by an ohmic heater and the rf-induced negative substrate bias voltage, Ub was -500V (en)
  • Si-C-N vrstvy byly připraveny na křemíkové substráty (Si(100), typu p) za použití dc magnetronového rozprašování křemíku a uhlíku v plynné směsi dusík–argon. Na terči bylo možné měnit poměr obsahu Si/C. Vlastnosti vrstev byly kontrolovány zejména obsahem argonu (0 – 75 %) v plynné směsi při stanoveném 40 % obsahu křemíku v erozní zóně terče. Celkový tlak a proud na magnetronový terč byly konstantní, teplota substrátu byla ohmickým ohřevem nastavena na Ts = 600 °C, radiofrekvenčně indukované předpětí na substrátu Ub bylo -500 V. K vysvětlení rozdílů mezi rozprašováním uhlíku a křemíku v argon–dusíkovém výboji byla použita hmotnostní spektroskopie. Vrstvy, ty (cs)
Title
  • Influence of nitrogen-argon gas mixtures on reactive magnetron sputtering of hard Si-C-N films
  • Influence of nitrogen-argon gas mixtures on reactive magnetron sputtering of hard Si-C-N films (en)
  • Vliv plynné směsi dusík-argon na reaktivní magnetronové naprašování tvrdých vrstev Si-C-N (cs)
skos:prefLabel
  • Influence of nitrogen-argon gas mixtures on reactive magnetron sputtering of hard Si-C-N films
  • Influence of nitrogen-argon gas mixtures on reactive magnetron sputtering of hard Si-C-N films (en)
  • Vliv plynné směsi dusík-argon na reaktivní magnetronové naprašování tvrdých vrstev Si-C-N (cs)
skos:notation
  • RIV/49777513:23520/02:00000529!RIV07-MSM-23520___
http://linked.open.../vavai/riv/strany
  • 74
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(ME 203), Z(AV0Z1010914), Z(AV0Z1048901), Z(MSM 235200002)
http://linked.open...iv/cisloPeriodika
  • 0
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 648920
http://linked.open...ai/riv/idVysledku
  • RIV/49777513:23520/02:00000529
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • Si-C-N films; magnetron co-sputtering; mass spectroscopy (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • NL - Nizozemsko
http://linked.open...ontrolniKodProRIV
  • [B081BBDE6F4A]
http://linked.open...i/riv/nazevZdroje
  • Surface and Coatings Technology
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Kormunda, Martin
  • Vlček, Jaroslav
  • Peřina, Vratislav
  • Zemek, Josef
  • Čížek, Jiří
http://linked.open...n/vavai/riv/zamer
issn
  • 0257-8972
number of pages
http://localhost/t...ganizacniJednotka
  • 23520
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