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| Description
| - The boron diffusion makes pn junction on n-type wafer or BSF (Back Surface Field) for p-type wafer, essential parts of any solar cell. This paper focuses on different options for boron diffusion processes from liquid source BBr3 for p-type diffusion on n-type wafers. There are three options to create selective structure of boron diffusion from liquid source BBr3: masking layers, pre-doping of source wafer or combination. The masking properties of various dielectric barriers were verified by four point probe sheet resistance mapping, also ECV technique was applied for evaluation of boron concentration profile. The first method is based on masking layer deposited on surface. This method is more complex, because the process has many steps (application of a masking layer, laser structuring or etching paste printing, boron diffusion and finally removal of the masking layer). Two different masking layers (PECVD SiNX or thermal oxide) were tested for this process. Masking layers have different thicknesses to determine the smallest possible masking layer. The PECVD nitride has better masking properties than the high temperature oxide. Etching properties of masking layers after boron diffusion were investigated. The second method is based on pre-doping the source (dummy) wafers. This method has many advantages, for example: the whole process can be done in one step and finally BSG (Boron Silicate Glass) grown during diffusion process is easily removable. In this case “the target wafer” is in direct contact with the source pre-diffused wafer during the high temperature process (drive-in step). Different shapes of p-type doped areas could be created by this way. The third method comes from combination of previous methods. The masking layer is at first formed on the wafer and diffusion in predefined area is taken placed from pre-diffused (dummy) wafers.
- The boron diffusion makes pn junction on n-type wafer or BSF (Back Surface Field) for p-type wafer, essential parts of any solar cell. This paper focuses on different options for boron diffusion processes from liquid source BBr3 for p-type diffusion on n-type wafers. There are three options to create selective structure of boron diffusion from liquid source BBr3: masking layers, pre-doping of source wafer or combination. The masking properties of various dielectric barriers were verified by four point probe sheet resistance mapping, also ECV technique was applied for evaluation of boron concentration profile. The first method is based on masking layer deposited on surface. This method is more complex, because the process has many steps (application of a masking layer, laser structuring or etching paste printing, boron diffusion and finally removal of the masking layer). Two different masking layers (PECVD SiNX or thermal oxide) were tested for this process. Masking layers have different thicknesses to determine the smallest possible masking layer. The PECVD nitride has better masking properties than the high temperature oxide. Etching properties of masking layers after boron diffusion were investigated. The second method is based on pre-doping the source (dummy) wafers. This method has many advantages, for example: the whole process can be done in one step and finally BSG (Boron Silicate Glass) grown during diffusion process is easily removable. In this case “the target wafer” is in direct contact with the source pre-diffused wafer during the high temperature process (drive-in step). Different shapes of p-type doped areas could be created by this way. The third method comes from combination of previous methods. The masking layer is at first formed on the wafer and diffusion in predefined area is taken placed from pre-diffused (dummy) wafers. (en)
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| Title
| - The selective boron doping from liquid source BBr3
- The selective boron doping from liquid source BBr3 (en)
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| skos:prefLabel
| - The selective boron doping from liquid source BBr3
- The selective boron doping from liquid source BBr3 (en)
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| skos:notation
| - RIV/49610040:_____/11:#0000013!RIV13-MPO-49610040
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| http://linked.open...avai/predkladatel
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| http://linked.open...avai/riv/aktivita
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| http://linked.open...avai/riv/aktivity
| - P(1M06031), P(FR-TI1/168), P(FR-TI1/574), S
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| http://linked.open...vai/riv/dodaniDat
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| http://linked.open...aciTvurceVysledku
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| http://linked.open.../riv/druhVysledku
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| http://linked.open...iv/duvernostUdaju
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| http://linked.open...titaPredkladatele
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| http://linked.open...dnocenehoVysledku
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| http://linked.open...ai/riv/idVysledku
| - RIV/49610040:_____/11:#0000013
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| http://linked.open...riv/jazykVysledku
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| http://linked.open.../riv/klicovaSlova
| - Boron; Back-Surface-Field; Diffusion; Doping; Silicon-Nitride; SiO2 (en)
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| http://linked.open.../riv/klicoveSlovo
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| http://linked.open...ontrolniKodProRIV
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| http://linked.open...v/mistoKonaniAkce
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| http://linked.open...i/riv/mistoVydani
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| http://linked.open...i/riv/nazevZdroje
| - Proceedings: 26th EU Photovoltaic Solar Energy Conference and Exhibition
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| http://linked.open...in/vavai/riv/obor
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| http://linked.open...ichTvurcuVysledku
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| http://linked.open...cetTvurcuVysledku
| |
| http://linked.open...vavai/riv/projekt
| |
| http://linked.open...UplatneniVysledku
| |
| http://linked.open...iv/tvurceVysledku
| - Bařinka, Radim
- Frantík, Ondřej
- Hladík, Jiří
- Poruba, Aleš
- Čech, Pavel
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| http://linked.open...vavai/riv/typAkce
| |
| http://linked.open.../riv/zahajeniAkce
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| number of pages
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| http://purl.org/ne...btex#hasPublisher
| |
| https://schema.org/isbn
| |
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