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  • Kompletní popis Hallova jevu lze však nalézt pouze ve velmi specializované literatuře. Relativně jednoduchá mikroskopická teorie je založena na klasickém elektronovém modelu a lineární náhrandí obvod Hallova generátoru je z něj odvozen. Model je podroben numerické simulaci v praktických aplikacích. výsledkem simulace jsou výsledky s množinou parametrů a několik obvodových charakteristik. Jak parametry, tak charakteristiky silně závisí na hustotě nosičů náboje v polovodiči. Numerické výsledky odhalily, že Hallův generátor je měkkým zdrojem nízkého napětí a vytváří velmi malé výstupní proud a výkon, mnohem menší než je 1 % vstupního výkonu. Účinnost obvodu a kvalita parametrů je omezena vytvářeným teplem v malém objemu sondy. Generované teplo navíc vede k nelinearitě zařízení. Spočtené charakteristiky ukázali, že zdroj konstantního vstupního proudu může být nahrazen vhodnějším zdrojem konstantního napětí za standardních podmínek. (cs)
  • The complete Hall effect description is only in special literature. A relatively simple microscopic theory based on a classical electron-gas model is presented and linear equivalent circuit of the Hall generator is derived from the model. The model is applied to a numerical simulation of a practical device. The simulation results in a full set of device parameters and a lot of characteristics. Both the parameters and characteristics depend strongly on semiconductor charge carrier density. Numerical results reveal that the Hall generator is a soft source of low voltage and produces very small output current and power, much less than 1 % of driving one. Efficiency and parameters are limited by the heat production in a probe of a small size. Heat production also leads to device nonlinearity. Characteristics reveal that driving constant current source can be replaced by a more convenient constant voltage source at standard conditions.
  • The complete Hall effect description is only in special literature. A relatively simple microscopic theory based on a classical electron-gas model is presented and linear equivalent circuit of the Hall generator is derived from the model. The model is applied to a numerical simulation of a practical device. The simulation results in a full set of device parameters and a lot of characteristics. Both the parameters and characteristics depend strongly on semiconductor charge carrier density. Numerical results reveal that the Hall generator is a soft source of low voltage and produces very small output current and power, much less than 1 % of driving one. Efficiency and parameters are limited by the heat production in a probe of a small size. Heat production also leads to device nonlinearity. Characteristics reveal that driving constant current source can be replaced by a more convenient constant voltage source at standard conditions. (en)
Title
  • Linear Equivalent Circuit of the Hall Effect Generator
  • Lineární náhrandí obvod Hallova generátoru (cs)
  • Linear Equivalent Circuit of the Hall Effect Generator (en)
skos:prefLabel
  • Linear Equivalent Circuit of the Hall Effect Generator
  • Lineární náhrandí obvod Hallova generátoru (cs)
  • Linear Equivalent Circuit of the Hall Effect Generator (en)
skos:notation
  • RIV/46747885:24220/08:#0000923!RIV09-MSM-24220___
http://linked.open...avai/riv/aktivita
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  • P(1M0553), P(FT-TA3/017)
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  • 1
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  • 376846
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  • RIV/46747885:24220/08:#0000923
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  • hall; generator; effect; sensor; equivalent; circuit (en)
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http://linked.open...odStatuVydavatele
  • CZ - Česká republika
http://linked.open...ontrolniKodProRIV
  • [803EFE376C97]
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  • Acta Technica
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http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 53
http://linked.open...iv/tvurceVysledku
  • Košek, Miloslav
  • Richter, Aleš
  • Mikolanda, Tomáš
issn
  • 0001-7043
number of pages
http://localhost/t...ganizacniJednotka
  • 24220
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