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Description
  • Je analyzován vliv volných nábojů na lokální tlak na nabitou feroelektrickou doménovou stěnu vytvořený elektrickým polem. Je odvozena obecná formule pro lokální tlak na nabitou feroelektrickou doménovou stěnu za předpokladu úplné nebo částečné kompenzace vázaných nábojů volnými náboji. Je zjištěno, že kompenzace vázaných polarizačních nábojů volnými náboji může vést k podstatné redukci pohyblivosti doménové stěny i v případě, kdy je pohyblivost volných nosičů nábojů vysoká. Toto potlačení pohyblivosti doménových stěn dává za vznik dodatečného mechanismu imprintu, který může zásadním způsobem ovlivnit přepolarizační vlastnosti feroelektrických materiálů. (cs)
  • The impact of free charges on the local pressure on a charged ferroelectric domain wall produced by an electric field has been analyzed. A general formula for the local pressure on a charged domain wall is derived considering full or partial compensation of bound polarization charges by free charges. It is concluded that the free charge compensation of bound polarization charges can lead to substantial reduction of the domain wall mobility even in the case when the mobility of free charge carriers is high. This mobility reduction gives rise to an additional imprint mechanism which may play essential role in switching properties of ferroelectric materials.
  • The impact of free charges on the local pressure on a charged ferroelectric domain wall produced by an electric field has been analyzed. A general formula for the local pressure on a charged domain wall is derived considering full or partial compensation of bound polarization charges by free charges. It is concluded that the free charge compensation of bound polarization charges can lead to substantial reduction of the domain wall mobility even in the case when the mobility of free charge carriers is high. This mobility reduction gives rise to an additional imprint mechanism which may play essential role in switching properties of ferroelectric materials. (en)
Title
  • Pressure on charged domain walls and additional imprint mechanism in ferroelectrics
  • Pressure on charged domain walls and additional imprint mechanism in ferroelectrics (en)
  • Tlak na nabitou doménovou stěnu a dodatečný mechanismus imprintu ve ferroelektriku (cs)
skos:prefLabel
  • Pressure on charged domain walls and additional imprint mechanism in ferroelectrics
  • Pressure on charged domain walls and additional imprint mechanism in ferroelectrics (en)
  • Tlak na nabitou doménovou stěnu a dodatečný mechanismus imprintu ve ferroelektriku (cs)
skos:notation
  • RIV/46747885:24220/07:#0000206!RIV08-GA0-24220___
http://linked.open.../vavai/riv/strany
  • 094110-1;094110-6
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA202/06/0411)
http://linked.open...iv/cisloPeriodika
  • 9
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 443945
http://linked.open...ai/riv/idVysledku
  • RIV/46747885:24220/07:#0000206
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • ferroelectric materials; ferroelectric domain walls; dielectric polarisation; charge compensation; carrier mobility; ferroelectric switching (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [E58CB876710B]
http://linked.open...i/riv/nazevZdroje
  • Physical Review B (Condensed Matter and Materials Physics)
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 75
http://linked.open...iv/tvurceVysledku
  • Fousek, Jan
  • Mokrý, Pavel
  • Tagantsev, A. K.
issn
  • 1098-0121
number of pages
http://localhost/t...ganizacniJednotka
  • 24220
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