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  • Plasma oxidation, utilising highly activated oxygen or oxygen/argon plasma, is one of the low temperature technigues used to grow of dielectric films on metal and semiconductor surfaces. The paper deals with a comparative study of plasma characteristics and thin oxide film properties. The main diagnostic technigues applied in order to determine plasma parameters (QMS) diagnostics. The composition and the atomic surface density of prepared samples were studied by conventional Rutherford elastic back-scattering (RBS). Investigation of morphology of the sample surfaces and surface roughness of the alumina thin film were performed by Atomic Force Microscopy (AFM). The experimental technigues are combined with computer experiments in order to achieve betterinsight into the problems solved. The computer experiment of the oxide film growth is based on a model of both the plasma-solid interactions including basic processes on the substrate and the processes in the growing oxide films.
  • Plasma oxidation, utilising highly activated oxygen or oxygen/argon plasma, is one of the low temperature technigues used to grow of dielectric films on metal and semiconductor surfaces. The paper deals with a comparative study of plasma characteristics and thin oxide film properties. The main diagnostic technigues applied in order to determine plasma parameters (QMS) diagnostics. The composition and the atomic surface density of prepared samples were studied by conventional Rutherford elastic back-scattering (RBS). Investigation of morphology of the sample surfaces and surface roughness of the alumina thin film were performed by Atomic Force Microscopy (AFM). The experimental technigues are combined with computer experiments in order to achieve betterinsight into the problems solved. The computer experiment of the oxide film growth is based on a model of both the plasma-solid interactions including basic processes on the substrate and the processes in the growing oxide films. (en)
Title
  • Physical Processes During Plasma Oxidation of Aluminium
  • Physical Processes During Plasma Oxidation of Aluminium (en)
skos:prefLabel
  • Physical Processes During Plasma Oxidation of Aluminium
  • Physical Processes During Plasma Oxidation of Aluminium (en)
skos:notation
  • RIV/44555601:13430/01:00001438!RIV/2002/MSM/134302/N
http://linked.open.../vavai/riv/strany
  • 85-87
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(OC 527.50), P(OK 401), P(OK 409), Z(MSM 113200002), Z(MSM 134300001)
http://linked.open...iv/cisloPeriodika
  • 300
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 691163
http://linked.open...ai/riv/idVysledku
  • RIV/44555601:13430/01:00001438
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • Plasma oxidation, OES, QMS,RBS, AFM, Al2O3 (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • FR - Francouzská republika
http://linked.open...ontrolniKodProRIV
  • [E01CAF873F22]
http://linked.open...i/riv/nazevZdroje
  • Le Vide: science, technigue et application
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...ocetUcastnikuAkce
http://linked.open...nichUcastnikuAkce
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 56
http://linked.open...iv/tvurceVysledku
  • Hrach, Rudolf
  • Macková, Anna
  • Pavlík, Jaroslav
  • Novák, Stanislav
  • Strýhal, Zdeněk
  • Vicher, Miroslav
  • Peřina, Václav
http://linked.open...n/vavai/riv/zamer
issn
  • 1266-0167
number of pages
http://localhost/t...ganizacniJednotka
  • 13430
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