About: DEMO SAMPLE (PROTOTYPE ) – V001/TA01010078

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About: DEMO SAMPLE (PROTOTYPE ) – V001/TA01010078 - W750S01/S00 SOI Wafers / 3 µm Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Prototype (sample) of Bond and Grind Back Silicon-On-Insulator (BGSOI) wafer. BGSOI wafer diameter 150 mm, CZSi substrate sligthly doped by Boron (3-13 ohmcm), thickness 625 or 525 um, BOX (buried oxide layer) 620 nm, defect-free device layer thickness 3 +/- 0.3 um. Crystallographic orientation (100). Bonded interface: BOX/device layer. Back side surface: thermal oxide > 200 nm. Prototype (sample) of Bond and Grind Back Silicon-On-Insulator (BGSOI) wafer. BGSOI wafer diameter 150 mm, CZSi substrate sligthly doped by Boron (3-13 ohmcm), thickness 625 or 525 um, BOX (buried oxide layer) 620 nm, defect-free device layer thickness 3 +/- 0.3 um. Crystallographic orientation (100). Bonded interface: BOX/device layer. Back side surface: thermal oxide > 200 nm. (en)
Title	DEMO SAMPLE (PROTOTYPE ) – V001/TA01010078 - W750S01/S00 SOI Wafers / 3 µm DEMO SAMPLE (PROTOTYPE ) – V001/TA01010078 - W750S01/S00 SOI Wafers / 3 µm (en)
skos:prefLabel	DEMO SAMPLE (PROTOTYPE ) – V001/TA01010078 - W750S01/S00 SOI Wafers / 3 µm DEMO SAMPLE (PROTOTYPE ) – V001/TA01010078 - W750S01/S00 SOI Wafers / 3 µm (en)
skos:notation	RIV/26821532:_____/12:#0000036!RIV13-TA0-26821532
http://linked.open...avai/predkladatel	ON SEMICONDUCTOR CZECH REPUBLIC, s.r.o., právní nástupce
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(TA01010078)
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Lorenc, Michal Pospíšil, Miloš Válek, Lukáš Šik, Jan
http://linked.open.../riv/druhVysledku	G/B - Funkční vzorek
http://linked.open...iv/duvernostUdaju	C - Předmět podléhá obchodnímu tajemství (§17 až 20 Obchodního zákoníku), ale některé údaje jsou upraveny tak, aby byly zveřejnitelné
http://linked.open...onomickeParametry	Wafer costs < 60 USD.
http://linked.open...titaPredkladatele	ON SEMICONDUCTOR CZECH REPUBLIC, s.r.o.
http://linked.open...dnocenehoVysledku	130004
http://linked.open...ai/riv/idVysledku	RIV/26821532:_____/12:#0000036
http://linked.open...terniIdentifikace	V001/TA01010078-W750S01/S00
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open...vai/riv/kategorie	A - Do 5 mil. Kč
http://linked.open.../riv/klicovaSlova	SOI; Silicon-On-Insulator; BGSOI; Polished wafer (en)
http://linked.open.../riv/klicoveSlovo	BGSOI Polished wafer SOI Silicon-On-Insulator
http://linked.open...ontrolniKodProRIV	[46B4B546DF38]
http://linked.open.../licencniPoplatek	A - Poskytovatel licence na výsledek požaduje licenční poplatek
http://linked.open...in/vavai/riv/obor	JJ
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	SOI Structures for Advanced Semiconductor Applications
http://linked.open...UplatneniVysledku	2012
http://linked.open...echnickeParametry	Diameter 150 mm, substrate CZSi:B 3-13 ohmcm, (100), THK 625 or 525 um, BOX 620 nm, defect-free DL THK 3 +/- 0.3 um.
http://linked.open...iv/tvurceVysledku	Lorenc, Michal Pospíšil, Miloš Válek, Lukáš Šik, Jan
http://linked.open...avai/riv/vlastnik	ON SEMICONDUCTOR CZECH REPUBLIC, s.r.o., právní nástupce
http://linked.open...itiJinymSubjektem	A - Nabytí licence je nutné vždy

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