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rdf:type
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Description
| - Prototype (sample) – V001/TA01010078 - of advanced Silicon-On-Insulator (SOI) structure for High-Frequency-Voltage-Regulators. SOI wafer diameter 150 mm, substrate heavily doped by Phosphorus (<0.002 ohmcm) thickness 525 um, BOX 620 nm, device layer thickness 1.5 um, device layer thickness variability +/- 0.3 um.
- Prototype (sample) – V001/TA01010078 - of advanced Silicon-On-Insulator (SOI) structure for High-Frequency-Voltage-Regulators. SOI wafer diameter 150 mm, substrate heavily doped by Phosphorus (<0.002 ohmcm) thickness 525 um, BOX 620 nm, device layer thickness 1.5 um, device layer thickness variability +/- 0.3 um. (en)
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Title
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skos:prefLabel
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skos:notation
| - RIV/26821532:_____/11:#0000029!RIV12-TA0-26821532
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http://linked.open...avai/predkladatel
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...onomickeParametry
| - Jednotková cena SOI desky pod 100 USD s potenciálem zvýšení výroby, exportu i zisku (plánované uplatnění výsledku od roku 2013).
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/26821532:_____/11:#0000029
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http://linked.open...terniIdentifikace
| - V001/TA01010078 (W660S00)
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http://linked.open...riv/jazykVysledku
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http://linked.open...vai/riv/kategorie
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http://linked.open.../riv/klicovaSlova
| - SOI; Silicon; Wafer; Silicon-On-Insulator; Bonding (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...ontrolniKodProRIV
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http://linked.open.../licencniPoplatek
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http://linked.open...okalizaceVysledku
| - ON SEMICONDUCTOR, Rožnov pod Radhoštěm - ONCR/RDCE/BUDOVA V12
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...echnickeParametry
| - SOI: Substrát: průměr 150mm (100) Si:P (<2 mohmcm) 525 um, BOX 620 +/- 10 nm, aktivní vrstva Si:B (100) 1.5 um +/- 0.3um
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http://linked.open...iv/tvurceVysledku
| - Kostelník, Petr
- Lorenc, Michal
- Pospíšil, Miloš
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http://linked.open...avai/riv/vlastnik
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http://linked.open...itiJinymSubjektem
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