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Description
  • We report on a new method of external gettering in Si substrate for semiconductor application. The proposed method is based on the deposition of a multilayer system formed by introducing a number of thin buried silicon oxide layers into the thick polycrystalline silicon layer deposited on the wafer backside. Oxide films af a few nanometer thickness significantly retard both the grain growth and subsequent loss of the gettering capability of the polycrystalline silicon layer during high temperature annealing. The mechanisms of the grain growth and the influence of the embedded oxide layers on the gettering function in the multilayer system are discussed. We used SEM and TEM for characterization of the multilayer system, and intentional contamination for demonstration of gettering properties.
  • We report on a new method of external gettering in Si substrate for semiconductor application. The proposed method is based on the deposition of a multilayer system formed by introducing a number of thin buried silicon oxide layers into the thick polycrystalline silicon layer deposited on the wafer backside. Oxide films af a few nanometer thickness significantly retard both the grain growth and subsequent loss of the gettering capability of the polycrystalline silicon layer during high temperature annealing. The mechanisms of the grain growth and the influence of the embedded oxide layers on the gettering function in the multilayer system are discussed. We used SEM and TEM for characterization of the multilayer system, and intentional contamination for demonstration of gettering properties. (en)
Title
  • Polycrystalline silicon layers with enhanced thermal stability
  • Polycrystalline silicon layers with enhanced thermal stability (en)
skos:prefLabel
  • Polycrystalline silicon layers with enhanced thermal stability
  • Polycrystalline silicon layers with enhanced thermal stability (en)
skos:notation
  • RIV/26821532:_____/11:#0000028!RIV12-TA0-26821532
http://linked.open...avai/predkladatel
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(ED1.1.00/02.0068), P(TA01010078)
http://linked.open...iv/cisloPeriodika
  • 2011
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 221200
http://linked.open...ai/riv/idVysledku
  • RIV/26821532:_____/11:#0000028
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • Chemical Vapour Deposition (CVD); Gettering; Multilayer Structure; Polycrystalline Silicon (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • CH - Švýcarská konfederace
http://linked.open...ontrolniKodProRIV
  • [CD392E486099]
http://linked.open...i/riv/nazevZdroje
  • Solid State Phenomena
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 178 - 179
http://linked.open...iv/tvurceVysledku
  • Lysáček, David
  • Šik, Jan
issn
  • 1012-0394
number of pages
http://bibframe.org/vocab/doi
  • 10.4028/www.scientific.net/SSP.178-179.385
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