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  • Neutron transmutation doping of semiconductors is an important method for applications that require high dopant homogeneity. For silicon, it is based on the conversion of 30Si into 31P through a 30Si (n,?) 31Si reaction during neutron irradiation following beta decay of 31Si to 31P. Neutron irradiation is usually performed in research reactors. The main characteristics of a doped silicon sample are (1) purity of the original silicon, (2) average phosphorus concentration and (3) phosphorus concentration homogeneity (uniformity). This paper describes measurement methods that utilise radiation induced during doping irradiation to measure these characteristics. The first two parameters can be measured using gamma spectrometry. The main part of the paper deals with homogeneity measurement. It describes a measurement method that is based on the detection of beta radiation from 31Si. Examples of experimental results are given. The experiments were performed in the LVR-15 research reactor.
  • Neutron transmutation doping of semiconductors is an important method for applications that require high dopant homogeneity. For silicon, it is based on the conversion of 30Si into 31P through a 30Si (n,?) 31Si reaction during neutron irradiation following beta decay of 31Si to 31P. Neutron irradiation is usually performed in research reactors. The main characteristics of a doped silicon sample are (1) purity of the original silicon, (2) average phosphorus concentration and (3) phosphorus concentration homogeneity (uniformity). This paper describes measurement methods that utilise radiation induced during doping irradiation to measure these characteristics. The first two parameters can be measured using gamma spectrometry. The main part of the paper deals with homogeneity measurement. It describes a measurement method that is based on the detection of beta radiation from 31Si. Examples of experimental results are given. The experiments were performed in the LVR-15 research reactor. (en)
Title
  • Radiation measurements after radiation of silicon for neutron transmutation doping
  • Radiation measurements after radiation of silicon for neutron transmutation doping (en)
skos:prefLabel
  • Radiation measurements after radiation of silicon for neutron transmutation doping
  • Radiation measurements after radiation of silicon for neutron transmutation doping (en)
skos:notation
  • RIV/26722445:_____/14:#0000921!RIV15-MPO-26722445
http://linked.open...avai/riv/aktivita
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  • P(FR-TI1/397)
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  • 2
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  • 41192
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  • RIV/26722445:_____/14:#0000921
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  • Neutron transmutation doping; Silicon homogeneity; Research reactor; Beta radiation (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV
  • [2968145D35BD]
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  • Radiation Physics and Chemistry
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  • 95
http://linked.open...iv/tvurceVysledku
  • Viererbl, Ladislav
  • Klupák, Vít
  • Kolmistr, Adam
  • Lahodová, Zdena
  • Vinš, Miroslav
  • Stehno, Josef
http://linked.open...ain/vavai/riv/wos
  • 000329271400101
issn
  • 0969-806X
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.radphyschem.2012.12.024
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