About: Toward Site-Specific Dopant Contrast in Scanning Electron Microscopy

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Since semiconductor devices are being scaled down to dimensions of several nanometers there is a growing need for techniques capable of quantitative analysis of dopant concentrations at the nanometer scale in all three dimensions. Imaging dopant contrast by scanning electron microscopy (SEM) is a very promising method, but many unresolved issues hinder its routine application for device analysis, especially in cases of buried layers where site-specific sample preparation is challenging. Here, we report on optimization of site-specific sample preparation by the focused Ga ion beam (FIB) technique that provides improved dopant contrast in SEM. Similar to FIB lamella preparation for transmission electron microscopy, a polishing sequence with decreasing ion energy is necessary to minimize the thickness of the electronically dead layer. We have achieved contrast values comparable to the cleaved sample, being able to detect dopant concentrations down to 1x10^16 cm^-3. A theoretical model shows that the elec Since semiconductor devices are being scaled down to dimensions of several nanometers there is a growing need for techniques capable of quantitative analysis of dopant concentrations at the nanometer scale in all three dimensions. Imaging dopant contrast by scanning electron microscopy (SEM) is a very promising method, but many unresolved issues hinder its routine application for device analysis, especially in cases of buried layers where site-specific sample preparation is challenging. Here, we report on optimization of site-specific sample preparation by the focused Ga ion beam (FIB) technique that provides improved dopant contrast in SEM. Similar to FIB lamella preparation for transmission electron microscopy, a polishing sequence with decreasing ion energy is necessary to minimize the thickness of the electronically dead layer. We have achieved contrast values comparable to the cleaved sample, being able to detect dopant concentrations down to 1x10^16 cm^-3. A theoretical model shows that the elec (en)
Title	Toward Site-Specific Dopant Contrast in Scanning Electron Microscopy Toward Site-Specific Dopant Contrast in Scanning Electron Microscopy (en)
skos:prefLabel	Toward Site-Specific Dopant Contrast in Scanning Electron Microscopy Toward Site-Specific Dopant Contrast in Scanning Electron Microscopy (en)
skos:notation	RIV/00216305:26620/14:PU109853!RIV15-MSM-26620___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(ED1.1.00/02.0068), P(GPP108/12/P699)
http://linked.open...iv/cisloPeriodika	4
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Kolíbal, Miroslav Šikola, Tomáš Druckmüllerová, Zdena
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Středoevropský technologický institut
http://linked.open...dnocenehoVysledku	50786
http://linked.open...ai/riv/idVysledku	RIV/00216305:26620/14:PU109853
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	dopant mapping, scanning electron microscopy (SEM), focused ion beam (FIB), amorphization, semiconductors and semiconductor devices (en)
http://linked.open.../riv/klicoveSlovo	dopant mapping semiconductors and semiconductor devices amorphization focused ion beam (FIB) scanning electron microscopy (SEM)
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[3FA9B9135352]
http://linked.open...i/riv/nazevZdroje	MICROSCOPY AND MICROANALYSIS
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Central european institute of technology Fabrication of semiconductor nanowires with optimized functional properties
http://linked.open...UplatneniVysledku	2014
http://linked.open...v/svazekPeriodika	20
http://linked.open...iv/tvurceVysledku	Kolíbal, Miroslav Šikola, Tomáš Vystavěl, Tomáš Druckmüllerová, Zdena
issn	1431-9276
number of pages	6 (xsd:int)
http://localhost/t...ganizacniJednotka	26620

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