About: Influence of localized structural defects on the pn junction properties

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Local defects, as micro-fractures, precipitates and other material inhomogeneities in solar cell structure, evidently modify electrical and photoelectrical behavior of the latter. To improve the efficiency and lifetime of existing solar cells, it is important to localize these defects which influence the p-n properties, and assign them corresponding electrical characteristics. Although the electric breakdown can be evident in current-voltage plot, the localization of local defects in the sample, that generate this breakdown, is not so easy task. It has to be done by microscopic investigations and measurement of light emission from defects under electrical bias conditions. Thus to contribute to this end, the structure of defects is microscopically investigated and consequently, the defects can be removed by focused ion beam milling. The experimental results obtained from samples before and after milling are also discussed. Local defects, as micro-fractures, precipitates and other material inhomogeneities in solar cell structure, evidently modify electrical and photoelectrical behavior of the latter. To improve the efficiency and lifetime of existing solar cells, it is important to localize these defects which influence the p-n properties, and assign them corresponding electrical characteristics. Although the electric breakdown can be evident in current-voltage plot, the localization of local defects in the sample, that generate this breakdown, is not so easy task. It has to be done by microscopic investigations and measurement of light emission from defects under electrical bias conditions. Thus to contribute to this end, the structure of defects is microscopically investigated and consequently, the defects can be removed by focused ion beam milling. The experimental results obtained from samples before and after milling are also discussed. (en)
Title	Influence of localized structural defects on the pn junction properties Influence of localized structural defects on the pn junction properties (en)
skos:prefLabel	Influence of localized structural defects on the pn junction properties Influence of localized structural defects on the pn junction properties (en)
skos:notation	RIV/00216305:26620/14:PU107390!RIV15-MSM-26620___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(ED1.1.00/02.0068), P(ED2.1.00/03.0072)
http://linked.open...iv/cisloPeriodika	1
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Škarvada, Pavel Šicner, Jiří Tománek, Pavel
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Středoevropský technologický institut
http://linked.open...dnocenehoVysledku	21489
http://linked.open...ai/riv/idVysledku	RIV/00216305:26620/14:PU107390
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Solar cell, defect, silicon, ion beam milling (en)
http://linked.open.../riv/klicoveSlovo	defect Solar cell silicon ion beam milling
http://linked.open...odStatuVydavatele	CH - Švýcarská konfederace
http://linked.open...ontrolniKodProRIV	[C97B196796D5]
http://linked.open...i/riv/nazevZdroje	Key Engineering Materials (print)
http://linked.open...in/vavai/riv/obor	JU
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...vavai/riv/projekt	Central european institute of technology Centre of sensor, information and communication systems
http://linked.open...UplatneniVysledku	2014
http://linked.open...v/svazekPeriodika	592-593
http://linked.open...iv/tvurceVysledku	Tománek, Pavel Šicner, Jiří Škarvada, Pavel
issn	1013-9826
number of pages	4 (xsd:int)
http://localhost/t...ganizacniJednotka	26620

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