About: Metal-Semiconductor Junction Role in CdTe Detectors

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://www.degruyter.com/view/j/aeei.2013.13.issue-1/aeei-2013-0004/aeei-2013-0004.xml?format=INT
Description	We have performed noise spectroscopy and charge transport properties analysis of CdTe detectors. Two types of high volume detectors are compared: Low ohmic (based on low resistivity crystal material 70 Ohm cm) and semi-insulating ( 10^8 Ohmcm).The theoretical fundaments of contacts role in detector system are given. We observed high asymmetry of IV characteristics of the lowohmic sample between normal and reverse bias, showing improper quality of contacts preparation, caused by higher concentration of impurities in metal-semiconductor area. This finding is supported by the fact that the low frequency noise spectral density is proportional to applied voltage with exponent 2.7, which is higher than the theoretical value 2.The semi-insulating sample very good contact rectification effect symmetry and less additive noise to the detector system. We have performed noise spectroscopy and charge transport properties analysis of CdTe detectors. Two types of high volume detectors are compared: Low ohmic (based on low resistivity crystal material 70 Ohm cm) and semi-insulating ( 10^8 Ohmcm).The theoretical fundaments of contacts role in detector system are given. We observed high asymmetry of IV characteristics of the lowohmic sample between normal and reverse bias, showing improper quality of contacts preparation, caused by higher concentration of impurities in metal-semiconductor area. This finding is supported by the fact that the low frequency noise spectral density is proportional to applied voltage with exponent 2.7, which is higher than the theoretical value 2.The semi-insulating sample very good contact rectification effect symmetry and less additive noise to the detector system. (en)
Title	Metal-Semiconductor Junction Role in CdTe Detectors Metal-Semiconductor Junction Role in CdTe Detectors (en)
skos:prefLabel	Metal-Semiconductor Junction Role in CdTe Detectors Metal-Semiconductor Junction Role in CdTe Detectors (en)
skos:notation	RIV/00216305:26220/13:PU104104!RIV14-GA0-26220___
http://linked.open...avai/predkladatel	Fakulta elektrotechniky a komunikačních technologií
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(GAP102/11/0995)
http://linked.open...iv/cisloPeriodika	1
http://linked.open...vai/riv/dodaniDat	2014
http://linked.open...aciTvurceVysledku	Grmela, Lubomír Šik, Ondřej
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	87503
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/13:PU104104
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	CdTe, transport characteristics, noise, contact quality (en)
http://linked.open.../riv/klicoveSlovo	CdTe transport characteristics noise contact quality
http://linked.open...odStatuVydavatele	PL - Polská republika
http://linked.open...ontrolniKodProRIV	[BC615DC57F9D]
http://linked.open...i/riv/nazevZdroje	ACTA PHYSICA POLONICA A
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	2 (xsd:int)
http://linked.open...vavai/riv/projekt	Electron transport, Noise and Diagnostic of Shottky and Autoemission Cathodes
http://linked.open...UplatneniVysledku	2013
http://linked.open...v/svazekPeriodika	13
http://linked.open...iv/tvurceVysledku	Grmela, Lubomír Šik, Ondřej
http://linked.open...ain/vavai/riv/wos	000318549000098
issn	0587-4246
number of pages	4 (xsd:int)
http://bibframe.org/vocab/doi	10.2478/aeei-2013-0004
http://localhost/t...ganizacniJednotka	26220

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