About: Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy

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About: Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The objective of the study is a growth of SiC/(SiC)1-x(AlN)x structures by fast sublimation epitaxy of the polycrystalline source of (SiC)1-x(AlN)x and their characterisation by proximal scanning electron microscopy and atomic force microscopy. For that purpose optimal conditions of sublimation process have been defined. Manufactured structures could be used as substrates for wide-band-gap semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, as well as for the production of transistors with high mobility of electrons and also for creation of blue and ultraviolet light emitters (light-emitted diodes and laser diodes). The result of analysis shows that increasing of the growth temperature up to 2300 K llows carry out sublimation epitaxy of thin layers of aluminum nitride and its solid solution. The objective of the study is a growth of SiC/(SiC)1-x(AlN)x structures by fast sublimation epitaxy of the polycrystalline source of (SiC)1-x(AlN)x and their characterisation by proximal scanning electron microscopy and atomic force microscopy. For that purpose optimal conditions of sublimation process have been defined. Manufactured structures could be used as substrates for wide-band-gap semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, as well as for the production of transistors with high mobility of electrons and also for creation of blue and ultraviolet light emitters (light-emitted diodes and laser diodes). The result of analysis shows that increasing of the growth temperature up to 2300 K llows carry out sublimation epitaxy of thin layers of aluminum nitride and its solid solution. (en)
Title	Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy (en)
skos:prefLabel	Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy (en)
skos:notation	RIV/00216305:26220/13:PU103765!RIV14-GA0-26220___
http://linked.open...avai/predkladatel	Fakulta elektrotechniky a komunikačních technologií
http://linked.open...avai/riv/aktivita	P S
http://linked.open...avai/riv/aktivity	P(GAP102/11/0995), S
http://linked.open...iv/cisloPeriodika	48
http://linked.open...vai/riv/dodaniDat	2014
http://linked.open...aciTvurceVysledku	Tománek, Pavel Dallaeva, Dinara
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	104048
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/13:PU103765
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	CdS, AlN, thin layer, proximal microscopy (en)
http://linked.open.../riv/klicoveSlovo	CdS AlN proximal microscopy thin layer
http://linked.open...odStatuVydavatele	FR - Francouzská republika
http://linked.open...ontrolniKodProRIV	[6CB091C73B60]
http://linked.open...i/riv/nazevZdroje	EPJ Web of Conferences
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Electron transport, Noise and Diagnostic of Shottky and Autoemission Cathodes
http://linked.open...UplatneniVysledku	2013
http://linked.open...v/svazekPeriodika	48
http://linked.open...iv/tvurceVysledku	Tománek, Pavel Bilalov, Bilal Dallaeva, Dinara Korostylev, Evgenij
issn	2100-014X
number of pages	4 (xsd:int)
http://bibframe.org/vocab/doi	10.1051/epjconf/20134800002
http://localhost/t...ganizacniJednotka	26220

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