About: Structural properties of Al2O3/AlN thin film prepared by magnetron sputtering of Al in HF-activated nitrogen plasma

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About: Structural properties of Al2O3/AlN thin film prepared by magnetron sputtering of Al in HF-activated nitrogen plasma Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	A process for ion-plasmaformation of aluminumnitride (AlN) nanolayers on nitrided sapphire (Al2O3) substrates is presented. The method is based on the direct current magnetron sputtering of a high-purity aluminumtarget in the presence of an argon–nitrogen gas mix and high frequency-activated nitrogen plasma. The method, combined with ion etching, producedmatched layers by nitration of Al2O3 in the (0001) plane, and formation of high quality AlN epilayers on this surface was observed. The processing characteristics and morphology dependence on synthesis parameters were studied using atomic force microscopy. A process for ion-plasmaformation of aluminumnitride (AlN) nanolayers on nitrided sapphire (Al2O3) substrates is presented. The method is based on the direct current magnetron sputtering of a high-purity aluminumtarget in the presence of an argon–nitrogen gas mix and high frequency-activated nitrogen plasma. The method, combined with ion etching, producedmatched layers by nitration of Al2O3 in the (0001) plane, and formation of high quality AlN epilayers on this surface was observed. The processing characteristics and morphology dependence on synthesis parameters were studied using atomic force microscopy. (en)
Title	Structural properties of Al2O3/AlN thin film prepared by magnetron sputtering of Al in HF-activated nitrogen plasma Structural properties of Al2O3/AlN thin film prepared by magnetron sputtering of Al in HF-activated nitrogen plasma (en)
skos:prefLabel	Structural properties of Al2O3/AlN thin film prepared by magnetron sputtering of Al in HF-activated nitrogen plasma Structural properties of Al2O3/AlN thin film prepared by magnetron sputtering of Al in HF-activated nitrogen plasma (en)
skos:notation	RIV/00216305:26220/13:PU101067!RIV15-MSM-26220___
http://linked.open...avai/riv/aktivita	P S
http://linked.open...avai/riv/aktivity	P(ED1.1.00/02.0068), P(ED2.1.00/03.0072), P(GAP102/11/0995), S
http://linked.open...iv/cisloPeriodika	526
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Škarvada, Pavel Tománek, Pavel Dallaeva, Dinara
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	108365
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/13:PU101067
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Wide-band-gap semiconductor, aluminum nitride, magnetron sputtering, morphology, composition, X-ray photoelectron spectrometry, atomic force microscopy (en)
http://linked.open.../riv/klicoveSlovo	magnetron sputtering aluminum nitride Wide-band-gap semiconductor X-ray photoelectron spectrometry composition morphology atomic force microscopy
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[86A2C8F63E97]
http://linked.open...i/riv/nazevZdroje	Thin Solid Films
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	8 (xsd:int)
http://linked.open...vavai/riv/projekt	Central european institute of technology Centre of sensor, information and communication systems Electron transport, Noise and Diagnostic of Shottky and Autoemission Cathodes
http://linked.open...UplatneniVysledku	2013
http://linked.open...v/svazekPeriodika	526
http://linked.open...iv/tvurceVysledku	Tománek, Pavel Škarvada, Pavel Bilalov, Bilal Dallaeva, Dinara Safaraliev, Gadjimet Kardashova, Gulnara Smith, Steve J. Gitikchiev, Magomed
issn	0040-6090
number of pages	5 (xsd:int)
http://localhost/t...ganizacniJednotka	26220

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