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Description
| - This paper describes formation process and study of silicon carbide and aluminum nitride thin layers which are the advanced materials for high temperatures electronics. Sublimation epitaxy and ion-plasma method were used. Monocrystalline SiC plates of 6H polytypic were used for formation of SiC epilayers. Formation of AlN epilayers is labored because of absence of its own substrates and epitaxial deposition is made by heteroepitaxy on foreign substrates of other materials. Films of AlN were obtained by ion-plasma method on the sapphire substrates. Obtained layers are investigated by X-ray diffractometry, electron diffraction and atomic force microscopy.
- This paper describes formation process and study of silicon carbide and aluminum nitride thin layers which are the advanced materials for high temperatures electronics. Sublimation epitaxy and ion-plasma method were used. Monocrystalline SiC plates of 6H polytypic were used for formation of SiC epilayers. Formation of AlN epilayers is labored because of absence of its own substrates and epitaxial deposition is made by heteroepitaxy on foreign substrates of other materials. Films of AlN were obtained by ion-plasma method on the sapphire substrates. Obtained layers are investigated by X-ray diffractometry, electron diffraction and atomic force microscopy. (en)
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Title
| - Formation and study of SiC and AlN epilayers
- Formation and study of SiC and AlN epilayers (en)
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skos:prefLabel
| - Formation and study of SiC and AlN epilayers
- Formation and study of SiC and AlN epilayers (en)
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skos:notation
| - RIV/00216305:26220/12:PU99139!RIV13-GA0-26220___
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http://linked.open...avai/predkladatel
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(ED2.1.00/03.0072), P(GAP102/11/0995)
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/00216305:26220/12:PU99139
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - sublimation epitaxy, ion-plasma sputtering, structural perfection, morphology (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...ontrolniKodProRIV
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http://linked.open...v/mistoKonaniAkce
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http://linked.open...i/riv/mistoVydani
| - LITERA, Tabor 43a, 61200 Brno
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http://linked.open...i/riv/nazevZdroje
| - IMAPS CS International Conference. Electronic Devices and Systems. EDS'12. Proceedings.
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...iv/tvurceVysledku
| - Tománek, Pavel
- Bilalov, Bilal
- Dallaeva, Dinara
- Safaraliev, Gadjimet
- Kardashova, Gulnara
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http://linked.open...vavai/riv/typAkce
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http://linked.open.../riv/zahajeniAkce
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number of pages
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http://purl.org/ne...btex#hasPublisher
| - Vysoke uceni technicke v Brne
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https://schema.org/isbn
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http://localhost/t...ganizacniJednotka
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is http://linked.open...avai/riv/vysledek
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