About: Formation and study of SiC and AlN epilayers

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	This paper describes formation process and study of silicon carbide and aluminum nitride thin layers which are the advanced materials for high temperatures electronics. Sublimation epitaxy and ion-plasma method were used. Monocrystalline SiC plates of 6H polytypic were used for formation of SiC epilayers. Formation of AlN epilayers is labored because of absence of its own substrates and epitaxial deposition is made by heteroepitaxy on foreign substrates of other materials. Films of AlN were obtained by ion-plasma method on the sapphire substrates. Obtained layers are investigated by X-ray diffractometry, electron diffraction and atomic force microscopy. This paper describes formation process and study of silicon carbide and aluminum nitride thin layers which are the advanced materials for high temperatures electronics. Sublimation epitaxy and ion-plasma method were used. Monocrystalline SiC plates of 6H polytypic were used for formation of SiC epilayers. Formation of AlN epilayers is labored because of absence of its own substrates and epitaxial deposition is made by heteroepitaxy on foreign substrates of other materials. Films of AlN were obtained by ion-plasma method on the sapphire substrates. Obtained layers are investigated by X-ray diffractometry, electron diffraction and atomic force microscopy. (en)
Title	Formation and study of SiC and AlN epilayers Formation and study of SiC and AlN epilayers (en)
skos:prefLabel	Formation and study of SiC and AlN epilayers Formation and study of SiC and AlN epilayers (en)
skos:notation	RIV/00216305:26220/12:PU99139!RIV13-GA0-26220___
http://linked.open...avai/predkladatel	Fakulta elektrotechniky a komunikačních technologií
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(ED2.1.00/03.0072), P(GAP102/11/0995)
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Dallaeva, Dinara
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	136991
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/12:PU99139
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	sublimation epitaxy, ion-plasma sputtering, structural perfection, morphology (en)
http://linked.open.../riv/klicoveSlovo	morphology ion-plasma sputtering structural perfection sublimation epitaxy
http://linked.open...ontrolniKodProRIV	[131887862F97]
http://linked.open...v/mistoKonaniAkce	Brno
http://linked.open...i/riv/mistoVydani	LITERA, Tabor 43a, 61200 Brno
http://linked.open...i/riv/nazevZdroje	IMAPS CS International Conference. Electronic Devices and Systems. EDS'12. Proceedings.
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...vavai/riv/projekt	Centre of sensor, information and communication systems Electron transport, Noise and Diagnostic of Shottky and Autoemission Cathodes
http://linked.open...UplatneniVysledku	2012
http://linked.open...iv/tvurceVysledku	Tománek, Pavel Bilalov, Bilal Dallaeva, Dinara Safaraliev, Gadjimet Kardashova, Gulnara
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2012-06-28 (xsd:date)
number of pages	5 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Vysoke uceni technicke v Brne
https://schema.org/isbn	978-80-214-4539-0
http://localhost/t...ganizacniJednotka	26220
is http://linked.open...avai/riv/vysledek of	Formation and study of SiC and AlN epilayers

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