About: Morphology and structural investigation of silicon carbide layers formated by sublimation

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Thin films of silicon carbide (SiC) were grown by sublimation epitaxy in vacuum on the 6H-SiC substrates. Structural properties of the initial substrates and the epilayers were studied by both electron-diffraction and X-ray diffraction methods. Electron-diffraction measurement gives the confirmation of the crystallinity of obtained layers. Experimental results show that a lattice per-fection of epilayer is equal to that of monocrystalline substrate. These results are also validated by scanning probe microscopy. So, this technology of fabrication of SiC thin films allows carry out a treatment of initial substrate defects in dependence of the process conditions. Thin films of silicon carbide (SiC) were grown by sublimation epitaxy in vacuum on the 6H-SiC substrates. Structural properties of the initial substrates and the epilayers were studied by both electron-diffraction and X-ray diffraction methods. Electron-diffraction measurement gives the confirmation of the crystallinity of obtained layers. Experimental results show that a lattice per-fection of epilayer is equal to that of monocrystalline substrate. These results are also validated by scanning probe microscopy. So, this technology of fabrication of SiC thin films allows carry out a treatment of initial substrate defects in dependence of the process conditions. (en)
Title	Morphology and structural investigation of silicon carbide layers formated by sublimation Morphology and structural investigation of silicon carbide layers formated by sublimation (en)
skos:prefLabel	Morphology and structural investigation of silicon carbide layers formated by sublimation Morphology and structural investigation of silicon carbide layers formated by sublimation (en)
skos:notation	RIV/00216305:26220/12:PU98332!RIV13-GA0-26220___
http://linked.open...avai/predkladatel	Fakulta elektrotechniky a komunikačních technologií
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(ED2.1.00/03.0072), P(GAP102/11/0995), P(LH11060)
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Dallaeva, Dinara
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	151848
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/12:PU98332
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	structural properties, lattice perfection, epilayer, substrate, epitaxy (en)
http://linked.open.../riv/klicoveSlovo	structural properties epitaxy substrate epilayer lattice perfection
http://linked.open...ontrolniKodProRIV	[A4D58A9DE74B]
http://linked.open...v/mistoKonaniAkce	Brno
http://linked.open...i/riv/mistoVydani	Brno
http://linked.open...i/riv/nazevZdroje	Proceedings of the 18th Conference STUDENT EEICT, vol. 3
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	1 (xsd:int)
http://linked.open...vavai/riv/projekt	Study of local electronic and optical characteristics of solar cells Centre of sensor, information and communication systems Electron transport, Noise and Diagnostic of Shottky and Autoemission Cathodes
http://linked.open...UplatneniVysledku	2012
http://linked.open...iv/tvurceVysledku	Dallaeva, Dinara
http://linked.open...vavai/riv/typAkce	CST - Celostátní
http://linked.open.../riv/zahajeniAkce	2012-04-26 (xsd:date)
number of pages	5 (xsd:int)
http://purl.org/ne...btex#hasPublisher	LITERA Brno, Tabor 43a, 612 00 Brno
https://schema.org/isbn	978-80-214-4462-1
http://localhost/t...ganizacniJednotka	26220
is http://linked.open...avai/riv/vysledek of	Morphology and structural investigation of silicon carbide layers formated by sublimation

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