About: Analysis of transport mechanisms for the Ta2O5 layers for low temperature range 80 K to 300 K

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	This paper provides testing and evaluation methods for the capacitors. In many portable electronic devices (mobile phones, notebooks, automotive industry e.g.), passive components, such as capacitors, usually outnumber active components. The electrical properties have significant role for using. The new measurement setup was constructed for measuring of tantalum capacitors with different properties for better characterization of tested samples. There are several methods of measuring for capacitors as volt-amps I-V in normal (with the Ta electrode positive) or reverse mode, constant voltage vs. time I – t and capacity vs. voltage C- V. The capacity measuring was expanded by measuring capacity vs. time as C-t and capacity vs. frequency C-f in that temperature range. The analysis of charge carrier transport in Ta capacitors with MnO2 cathode in the temperature range from 80K to 300 K was performed. The MIS structure is considered for Tantalum capacitor, where insulating Ta2O5 layer is formed on metall This paper provides testing and evaluation methods for the capacitors. In many portable electronic devices (mobile phones, notebooks, automotive industry e.g.), passive components, such as capacitors, usually outnumber active components. The electrical properties have significant role for using. The new measurement setup was constructed for measuring of tantalum capacitors with different properties for better characterization of tested samples. There are several methods of measuring for capacitors as volt-amps I-V in normal (with the Ta electrode positive) or reverse mode, constant voltage vs. time I – t and capacity vs. voltage C- V. The capacity measuring was expanded by measuring capacity vs. time as C-t and capacity vs. frequency C-f in that temperature range. The analysis of charge carrier transport in Ta capacitors with MnO2 cathode in the temperature range from 80K to 300 K was performed. The MIS structure is considered for Tantalum capacitor, where insulating Ta2O5 layer is formed on metall (en)
Title	Analysis of transport mechanisms for the Ta2O5 layers for low temperature range 80 K to 300 K Analysis of transport mechanisms for the Ta2O5 layers for low temperature range 80 K to 300 K (en)
skos:prefLabel	Analysis of transport mechanisms for the Ta2O5 layers for low temperature range 80 K to 300 K Analysis of transport mechanisms for the Ta2O5 layers for low temperature range 80 K to 300 K (en)
skos:notation	RIV/00216305:26220/12:PU101133!RIV14-MSM-26220___
http://linked.open...avai/predkladatel	Fakulta elektrotechniky a komunikačních technologií
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(MEB091129)
http://linked.open...vai/riv/dodaniDat	2014
http://linked.open...aciTvurceVysledku	Holcman, Vladimír Sedláková, Vlasta Kopecký, Martin
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoké učení technické v Brně / Fakulta elektrotechniky a komunikačních technologií
http://linked.open...dnocenehoVysledku	122304
http://linked.open...ai/riv/idVysledku	RIV/00216305:26220/12:PU101133
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Charge carrier transport, tantalum pentoxide, thin film, tunneling, Poole-Frenkel current (en)
http://linked.open.../riv/klicoveSlovo	tantalum pentoxide Charge carrier transport thin film Poole-Frenkel current tunneling
http://linked.open...ontrolniKodProRIV	[CCAABBCDA7E1]
http://linked.open...v/mistoKonaniAkce	Otočec Slovenia
http://linked.open...i/riv/mistoVydani	Slovinsko
http://linked.open...i/riv/nazevZdroje	MIDEM Society for Microelectronic, Electronic Components and Materials - Conference 2012 Proceedings
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Investigation of the noise of thick-film pressure sensors
http://linked.open...UplatneniVysledku	2012
http://linked.open...iv/tvurceVysledku	Holcman, Vladimír Kopecký, Martin Sedláková, Vlasta Pettersson, Hakan
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2012-09-19 (xsd:date)
number of pages	6 (xsd:int)
http://purl.org/ne...btex#hasPublisher	MIDEM
https://schema.org/isbn	978-961-92933-2-4
http://localhost/t...ganizacniJednotka	26220

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